2SD1366A datasheet(2/5 Pages) HITACHI

Il numero della parte	2SD1366A

Spiegazioni elettronici	Silicon NPN Epitaxial

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Produttore elettronici	HITACHI [Hitachi Semiconductor]

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2SD1366A

2

Absolute Maximum Ratings (Ta = 25°C)

Item

Symbol

Ratings

Unit

Collector to base voltage

V

CBO

30

V

Collector to emitter voltage

V

CEO

25

V

Emitter to base voltage

V

EBO

5V

Collector current

I

C

1A

Collector peak current

i

C(peak)*

1

1.5

A

Collector power dissipation

P

C*

2

1W

Junction temperature

Tj

150

°C

Storage temperature

Tstg

–55 to +150

°C

Notes: 1. PW

≤ 10 ms, Duty cycle ≤ 20%.

2. Value on the alumina ceramic board (12.5

× 20 × 0.7 mm)

Electrical Characteristics (Ta = 25°C)

Item

Symbol

Min

Typ

Max

Unit

Test conditions

Collector to base breakdown

voltage

V

(BR)CBO

30

—

V

I

C = 10 µA, IE = 0

Collector to emitter breakdown

voltage

V

(BR)CEO

25

—

V

I

C = 1 mA, RBE = ∞

Emitter to base breakdown

voltage

V

(BR)EBO

5—

—

V

I

E = 10 µA, IC = 0

Collector cutoff current

I

CBO

—

0.1

µAV

CB = 20 V, IE = 0

Emitter cutoff current

I

EBO

—

0.1

µAV

EB = 4 V, IC = 0

DC current transfer ratio

h

FE*

1

85

—

240

V

CE = 2 V, IC = 0.5 A, Pulse

Collector to emitter saturation

voltage

V

CE(sat)

—

0.15

0.3

V

I

C = 0.8 A, IB = 0.08 A, Pulse

Base to emitter saturation

voltage

V

BE(sat)

—

0.9

1.0

V

I

C = 0.8 A, IB = 0.08 A, Pulse

Gain bandwidth product

f

T

—

240

—

MHz

V

CE = 2 V, IC = 0.5 A, Pulse

Collector output capacitance

Cob

—

22

—

pF

V

CB = 10 V, IE = 0, f = 1 MHz

Note:

1. The 2SD1366A is grouped by h

FE as follows.

Mark

AC

AD

h

FE

85 to 170

120 to 240

See characteristic curves of 2SD1366.

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