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2SD1138 Scheda tecnica(PDF) 2 Page - Hitachi Semiconductor |
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2SD1138 Scheda tecnica(HTML) 2 Page - Hitachi Semiconductor |
2 / 6 page 2SD1138 2 Absolute Maximum Ratings (Ta = 25°C) Item Symbol Rating Unit Collector to base voltage V CBO 200 V Collector to emitter voltage V CEO 150 V Emitter to base voltage V EBO 6V Collector current I C 2A Collector peak current I C (peak) 5A Collector power dissipation P C 1.8 W P C* 1 30 W Junction temperature Tj 150 °C Storage temperature Tstg –45 to +150 °C Note: 1. Value at T C = 25°C. Electrical Characteristics (Ta = 25°C) Item Symbol Min Typ Max Unit Test conditions Collector to emitter breakdown voltage V (BR)CEO 150 — — V I C = 50 mA, RBE = ∞ Emitter to base breakdown voltage V (BR)EBO 6— — V I E = 5 mA, IC = 0 Collector cutoff current I CBO —— 1 µAV CB = 120 V, IE = 0 DC current transfer ratio h FE1* 1 60 — 320 V CE = 4 V, IC = 50 mA h FE2 60 — — V CE = 10 V, IC = 500 mA* 2 Collector to emitter saturation voltage V CE (sat) — — 3.0 V I C = 500 mA, IB = 50 mA* 2 Base to emitter voltage V BE — — 1.0 V V CB = 4 V, IC = 50 mA Collector output capacitance Cob — 20 — pF V CB = 100 V, IE = 0, f = 1 MHz Note: 1. The 2SD1138 is grouped by h FE1 as follows. 2. Pulse test. BC D 60 to 120 100 to 200 160 to 320 |
Codice articolo simile - 2SD1138 |
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Descrizione simile - 2SD1138 |
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