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J108 Scheda tecnica(PDF) 1 Page - Fairchild Semiconductor |
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J108 Scheda tecnica(HTML) 1 Page - Fairchild Semiconductor |
1 / 7 page ©2002 Fairchild Semiconductor Corporation Rev. B1, November 2002 Absolute Maximum Ratings * T A=25°C unless otherwise noted * These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES: 1) These ratings are based on a maximum junction temperature of 150 degrees C. 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. Electrical Characteristics T A=25°C unless otherwise noted * Pulse Test: Pulse Width ≤ 300µs, Duty Cycle ≤ 2.0% Symbol Parameter Value Units VDG Drain-Gate Voltage 25 V VGS Gate-Source Voltage -25 V IGF Forward Gate Current 10 mA TJ, Tstg Operating and Storage Junction Temperature Range -55 ~ +150 °C Symbol Parameter Test Condition Min. Max. Units Off Characteristics V(BR)GSS Gate-Source Breakdwon Voltage IG = -10µA, VDS = 0 -25 V IGSS Gate Reverse Current VGS = -15V, VDS = 0 VGS = -15V, VDS = 0, TA = 100°C -3.0 -200 nA nA VGS(off) Gate-Source Cutoff Voltage VDS = 15V, ID = 10nA 108 109 110 -3.0 -2.0 -0.5 -10 -6.0 -4.0 V V V On Characteristics IDSS Zero-Gate Voltage Drain Current * VDS = 15V, IGS = 0 108 109 110 80 40 10 mA mA mA rDS(on) Drain-Source On Resistance VDS ≤ 0.1V, VGS = 0 108 109 110 8.0 12 18 Ω Ω Ω Small Signal Characteristics Cdg(on) Csg(off) Drain Gate & Source Gate On Capacitance VDS = 0, VGS = 0, f = 1.0MHz 85 pF Cdg(on) Drain-Gate Off Capacitance VDS = 0, VGS = -10, f = 1.0MHz 15 pF Csg(off) Source-Gate Off Capacitance VDS = 0, VGS = -10, f = 1.0MHz 15 pF J108/J109/J110/MMBFJ108 N-Channel Switch • This device is designed for digital switching applications where very low on resistance is mandatory. • Sourced from Process 58. 1. Drain 2. Source 3. Gate 1 2 3 TO-92 1 1. Drain 2. Source 3. Gate SuperSOT-3 Marking: I8 |
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