 |
Motore di ricerca datesheet componenti elettronici |
|
|
Motore di ricerca datesheet componenti elettronici |
|
FQD7N10LTF Scheda tecnica(PDF) 2 Page - Fairchild Semiconductor |
|
||||||||||||||||||||||||||||||
FQD7N10LTF Scheda tecnica(HTML) 2 Page - Fairchild Semiconductor |
|
|
2 / 8 page  Package Marking and Ordering Information Part Number Top Mark Package Reel Size Tape Width Quantity FQD7N10L FQD7N10LTM D-PAK 330 mm 16 mm 2500 units ©2000 Fairchild Semiconductor Corporation FQD7N10L Rev. C1 www.fairchildsemi.com 2 1. Repetitive rating : pulse-width limited by maximum junction temperature. 2. L = 2.23 mH, IAS = 5.8 A, VDD = 25 V, RG = 25 Ω, starting TJ = 25oC. 3. ISD ≤ 7.3 A, di/dt ≤ 300 A/μs, VDD ≤ BVDSS, starting TJ = 25oC. 4. Essentially independent of operating temperature. Packing Method Tape and Reel Electrical Characteristics T C = 25 oC unless otherwise noted. Symbol Parameter Test Conditions Min . Typ . Max . Unit Off Characteristics BVDSS Drain-Source Breakdown Voltage VGS = 0 V, ID = 250 A 100 -- -- V BVDSS / TJ Breakdown Voltage Temperature Coefficient ID = 250 A, Referenced to 25°C -- 0.1 -- V/°C IDSS Zero Gate Voltage Drain Current VDS = 100 V, VGS = 0 V -- -- 1 A VDS = 80 V, TC = 125°C -- -- 10 A IGSSF Gate-Body Leakage Current, Forward VGS = 20 V, VDS = 0 V -- -- 100 nA IGSSR Gate-Body Leakage Current, Reverse VGS = -20 V, VDS = 0 V -- -- -100 nA On Characteristics VGS(th) Gate Threshold Voltage VDS = VGS, ID = 250 A 1.0 -- 2.0 V RDS(on) Static Drain-Source On-Resistance VGS = 10 V, ID = 2.9 A VGS = 5 V, ID = 2.9 A -- 0.275 0.300 0.35 0.38 gFS Forward Transconductance VDS = 30 V, ID = 2.9 A -- 4.6 -- S Dynamic Characteristics Ciss Input Capacitance VDS = 25 V, VGS = 0 V, f = 1.0 MHz -- 220 290 pF Coss Output Capacitance -- 55 72 pF Crss Reverse Transfer Capacitance -- 12 15 pF Switching Characteristics td(on) Turn-On Delay Time VDD = 50 V, ID = 7.3 A, RG = 25 (Note 4) -- 9 30 ns tr Turn-On Rise Time -- 100 210 ns td(off) Turn-Off Delay Time -- 17 45 ns tf Turn-Off Fall Time -- 50 110 ns Qg Total Gate Charge VDS = 80 V, ID = 7.3 A, VGS = 5 V (Note 4) -- 4.6 6.0 nC Qgs Gate-Source Charge -- 1.0 -- nC Qgd Gate-Drain Charge -- 2.6 -- nC Drain-Source Diode Characteristics and Maximum Ratings IS Maximum Continuous Drain-Source Diode Forward Current -- -- 5.8 A ISM Maximum Pulsed Drain-Source Diode Forward Current -- -- 23.2 A VSD Drain-Source Diode Forward Voltage VGS = 0 V, IS = 5.8 A -- -- 1.5 V trr Reverse Recovery Time VGS = 0 V, IS = 7.3 A, dIF / dt = 100 A/s -- 70 -- ns Qrr Reverse Recovery Charge -- 140 -- nC |
Codice articolo simile - FQD7N10LTF |
|
Descrizione simile - FQD7N10LTF |
|
|
|
Link URL |
| Privacy Policy |
| ALLDATASHEETIT.COM |
| Lei ha avuto il aiuto da alldatasheet? [ DONATE ] |
Di alldatasheet | Richest di pubblicita | contatti | Privacy Policy | scambio Link | Ricerca produttore All Rights Reserved©Alldatasheet.com |
| Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
|
Family Site : ic2ic.com |
icmetro.com |
Italian ▼
English
Chinese
German
Japanese
Russian
Korean
Spanish
French
Italian
Portuguese
Polish
Vietnamese
Indian
Mexican
British
New Zealand
