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TS2DDR2811 Scheda tecnica(PDF) 3 Page - Texas Instruments |
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TS2DDR2811 Scheda tecnica(HTML) 3 Page - Texas Instruments |
3 / 14 page TS2DDR2811 www.ti.com SCDS294 – DECEMBER 2009 ABSOLUTE MAXIMUM RATINGS (1) over operating free-air temperature range (unless otherwise noted) MIN MAX UNIT VCC Supply voltage range –0.5 4.6 V VIN Control input voltage range(2) (3) –0.5 7 V VI/O Switch I/O voltage range(2) (3) (4) –0.5 7 V IIK Control input clamp current VIN < 0 or VIN > VCC –50 mA II/OK I/O port clamp current VI/O < 0 or VI/O > VCC –50 mA II/O ON-state switch current(5) ±128 mA Continuous current through VDD or GND ±100 mA θJA Package thermal impedance(6) 31.8 °C/W Tstg Storage temperature range –65 150 °C (1) Stresses beyond those listed under "absolute maximum ratings" may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated under "recommended operating conditions" is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. (2) All voltages are with respect to ground, unless otherwise specified. (3) The input and output voltage ratings may be exceeded if the input and output clamp-current ratings are observed. (4) VI and VO are used to denote specific conditions for VI/O. (5) II and IO are used to denote specific conditions for II/O. (6) The package thermal impedance is calculated in accordance with JESD 51-7. RECOMMENDED OPERATING CONDITIONS (1) MIN MAX UNIT VCC Supply voltage 3 3.6 V VIH High-level control input voltage SEL 2 5.5 V VIL Low-level control input voltage SEL 0 0.8 V VI Input voltage SEL 0 5.5 V VI/O Input/output voltage 0 VCC V TA Operating free-air temperature –40 85 °C (1) All unused control inputs of the device must be held at VDD or GND to ensure proper device operation. Refer to the TI application report, Implications of Slow or Floating CMOS Inputs, literature number SCBA004. ELECTRICAL CHARACTERISTICS for 1000 Base-T Ethernet switching over recommended operating free-air temperature range, VCC = 3.3 V ± 0.3 V (unless otherwise noted) PARAMETER TEST CONDITIONS(1) MIN TYP(2) MAX UNIT VIK SEL VCC = 3.6 V, IIN = –18 mA –0.7 –1.2 V IIH SEL VCC = 3.6 V, VIN = VCC ±1 μA IIL SEL VCC = 3.6 V, VIN = GND ±1 μA ICC VCC = 3.6 V, II/O = 0, Switch ON or OFF 250 500 μA CIN SEL f = 1 M Hz, VIN = 0 2 2.5 pF COFF B port VI = 0, f = 1 MHz, Outputs open, Switch OFF 2.5 4 pF CON VI = 0, f = 1 MHz, Outputs open, Switch ON 8 TBD pF rON VCC = 3 V, 1.5 V ≤ VI ≤ VCC, IO = –40 mA 4 6 Ω rON(flat) (3) VCC = 3 V, VI = 1.5 V and VCC, IO = –40 mA 0.5 Ω ΔrON (4) VCC = 3 V, 1.5 V ≤ VI ≤ VCC, IO = –40 mA 0.4 1 Ω (1) VI, VO, II, and IO refer to I/O pins. VIN refers to the control inputs. (2) All typical values are at VCC = 3.3 V (unless otherwise noted), TA = 25°C. (3) rON(flat) is the difference of rON in a given channel at specified voltages. (4) ΔrON is the difference of rON from center (A4, A5) ports to any other port. Copyright © 2009, Texas Instruments Incorporated Submit Documentation Feedback 3 Product Folder Link(s): TS2DDR2811 |
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