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BDY58 Scheda tecnica(PDF) 1 Page - Savantic, Inc. |
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BDY58 Scheda tecnica(HTML) 1 Page - Savantic, Inc. |
1 / 3 page SavantIC Semiconductor Product Specification Silicon NPN Power Transistors BDY57 BDY58 DESCRIPTION ·With TO-3 package ·High current capability ·Fast switching speed APPLICATIONS ·For use in low frequency large signal power amplifications PINNING (See Fig.2) PIN DESCRIPTION 1 Base 2 Emitter 3 Collector Absolute maximum ratings(Ta=25 ) SYMBOL PARAMETER CONDITIONS VALUE UNIT BDY57 120 VCBO Collector-base voltage BDY58 Open emitter 160 V BDY57 80 VCEO Collector-emitter voltage BDY58 Open base 125 V VEBO Emitter-base voltage Open collector 10 V IC Collector current 25 A IB Base current 6 A PT Total power dissipation TC=25 175 W Tj Junction temperature 200 Tstg Storage temperature -65~200 THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal resistance from junction to case 1.0 /W Fig.1 simplified outline (TO-3) and symbol |
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