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R00017E Scheda tecnica(PDF) 1 Page - Solid States Devices, Inc |
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R00017E Scheda tecnica(HTML) 1 Page - Solid States Devices, Inc |
1 / 2 page NOTE: All specifications are subject to change without notification. SCD's for these devices should be reviewed by SSDI prior to release. DATA SHEET #: R00017E DOC Solid State Devices, Inc. 14701 Firestone Blvd * La Mirada, Ca 90638 Phone: (562) 404-4474 * Fax: (562) 404-1773 ssdi@ssdi-power.com * www.ssdi-power.com Designer’s Data Sheet Part Number/Ordering Information1/ S6189F __ __ __ │ │ │ │ │ │ │ │ └ │ │ │ │ │ └ └ Screening3/ __ = Not Screened TX = TX Level TXV = TXV S = S Level Package C = Ministud V = Isolated Ministud Voltage 6 = 600V 8 = 800V 10 = 1000V S6189F6 thru S6189F10 9 Amp Fast Recovery Rectifier 600 - 1000 Volts Features: Fast Recovery: 250 nsec Maximum PIV to 1000 Volts Low Reverse Leakage Current Hermetically Sealed Ministud Packages Single Chip Construction High Surge Rating Low Thermal Resistance TX, TXV, and Space Level Screening Available Available in Ultrafast and Hyperfast Versions Maximum Ratings2/ Symbol Value Units Peak Repetitive Reverse Voltage and DC Blocking Voltage S6189F6C, V S6189F8C, V S6189F10C, V VRRM VRWM VR 600 800 1000 Volts Average Rectified Forward Current (Resistive Load, 60 Hz, Sine Wave, TC ≤ 100°C) IO 9 Amps Peak Surge Current (8.3 ms Pulse, Half Sine Wave, TC ≤ 100°C) IFSM 125 Amps Operating & Storage Temperature TOP & TSTG -65 to +175 °C Maximum Thermal Resistance (Junction to Case) “V” Isolated “C” Hot Case RθJC 7.5 4.5 °C/W Notes: 1/ For ordering information, price, operating curves, and availability - contact factory. 2/ Unless otherwise specified, all electrical characteristics @ 25°C 3/ Screening based on MIL-PRF-19500. Screening flows available on request. Ministud (C) Isolated Ministud (V) |
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