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F00311 Scheda tecnica(PDF) 1 Page - Solid States Devices, Inc |
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F00311 Scheda tecnica(HTML) 1 Page - Solid States Devices, Inc |
1 / 2 page SOLID STATE DEVICES, INC. SFF75N06M SFF75N06Z FEATURES: DATA SHEET #: F00311B MAXIMUM RATINGS • Advanced high-cell density withstands high energy • Very low conduction and switching losses • Fast recovery drain-to-source diode with soft recovery • Rugged construction with poly silicon gate • Ultra low RDS (on) and high transconductance • Excellent high temperature stability • Very fast switching speed • Fast recovery and superior dv/dt performance • Increased reverse energy capability • Low input and transfer capacitance for easy paralleling • Hermetically sealed package • TX, TXV and Space Level screening available 75 AMP 60 VOLTS 15m Ω Ω Ω Ω Ω N-CHANNEL POWER MOSFET DESIGNER'S DATA SHEET NOTE: All specifications are subject to change without notification. SCDs for these devices should be reviewed by SSDI prior to release. VDG 6 0 Volts Drain to Gate Voltage (RGS = 1.0 m Ω) Ω) Ω) Ω) Ω) ID 561/ Continuous Drain Current Drain to Source Voltage VDS 60 Amps Volts Thermal Resistance, Junction to Case RΘ Θ Θ Θ ΘJC Top & Tstg -55 to +150 Operating and Storage Temperature oC oC/W 1 CHARACTERISTIC SYMBOL VALUE UNIT Watts Total Device Dissipation PD 125 95 @ TC = 25oC @ TC = 55oC TO-254Z (Z) TO-254 (M) 14830 Valley View Blvd * La Mirada, Ca 90638 Phone: (562) 404-7855 * Fax: (562) 404-1773 CASE OUTLINE: TO-254Z (Sufix Z) CASE OUTLINE: TO-254 (Sufix M) Available with Glass or Ceramic Seals. Contact Facory for details. Gate to Source Voltage VGS + 20 Volts Pin Out: Pin 1: Drain Pin 2: Source Pin 3: Gate Pin Out: Pin 1: Drain Pin 2: Source Pin 3: Gate |
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