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F00087B Scheda tecnica(PDF) 2 Page - Solid States Devices, Inc |
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F00087B Scheda tecnica(HTML) 2 Page - Solid States Devices, Inc |
2 / 3 page NOTE: All specifications are subject to change without notification. SCD's for these devices should be reviewed by SSDI prior to release. DATA SHEET #: F00087B DOC Solid State Devices, Inc. 14701 Firestone Blvd * La Mirada, CA 90638 Phone: (562) 404-4474 * Fax: (562) 404-1773 ssdi@ssdi-power.com * www.ssdi-power.com SFF440J Electrical Characteristics4/ Symbol Min Typ Max Units Drain to Source Breakdown Voltage VGS = 0V, ID = 250 µA BVDSS 500 570 –– V Drain to Source On State Resistance VGS = 10V, ID = 60% Rated ID RDS(on) –– 0.65 0.86 Ω On State Drain Current VDS > ID(on) x RDS(on) Max, VGS = 10V ID(on) 8 12 –– A Gate Threshold Voltage VDS = VGS, ID = 250µA VGS(th) 2.0 3.2 4.0 V Forward Transconductance VDS ≥ 50V, ID = 60% Rated ID gfs 4.9 6 –– S(Ʊ) Zero Gate Voltage Drain Current VDS = max rated voltage, VGS = 0V VDS = 80% Rated VDS, VGS = 0V, TA = 125 oC IDSS –– –– 0.015 5 25 250 μA Gate to Source Leakage Forward Gate to Source Leakage Reverse At rated VGS IGSS –– –– –– –– 100 -100 nA Total Gate Charge Gate to Source Charge Gate to Drain Charge VGS = 10V 80% Rated VDS ID = 8A Qg Qgs Qgd –– –– –– 30 8 12 50 10 25 nC Turn on Delay Time Rise Time Turn off Delay Time Fall Time VDD = 50% Rated VDS ID= 8 A RG = 9.1Ω RD = 30Ω td(on) tr td(off) tf –– –– –– –– 30 40 62 30 40 60 74 40 nsec Diode Forward Voltage IS = Rated ID, VGS = 0V, Tj = 25 oC VSD –– 0.85 1.2 V Diode Reverse Recovery Time Reverse Recovery Charge Tj = 25 oC, I F = Rated ID, di/dt = 100A/usec trr Qrr 210 2 900 7.7 970 8.9 nsec μC Input Capacitance Output Capacitance Reverse Transfer Capacitance VGS = 0V VDS = 25V f = 1 MHz Ciss Coss Crss –– –– –– 1450 180 40 –– –– –– pF |
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