NOTE: All specifications are subject to change without notification.

SCD's for these devices should be reviewed by SSDI prior to release.

DATA SHEET #: F00087B

DOC

Solid State Devices, Inc.

14701 Firestone Blvd * La Mirada, CA 90638

Phone: (562) 404-4474 * Fax: (562) 404-1773

ssdi@ssdi-power.com * www.ssdi-power.com

SFF440J

Symbol

Min

Typ

Max Units

Drain to Source Breakdown Voltage

500

570

––

V

Drain to Source On State Resistance

––

0.65

0.86

Ω

On State Drain Current

8

12

––

A

Gate Threshold Voltage

2.0

3.2

4.0

V

Forward Transconductance

4.9

6

––

S(Ʊ)

Zero Gate Voltage

Drain Current

––

––

0.015

5

25

250

μA

Gate to Source Leakage Forward

Gate to Source Leakage Reverse

––

––

––

––

100

-100

nA

Total Gate Charge

Gate to Source Charge

Gate to Drain Charge

––

––

––

30

8

12

50

10

25

nC

Turn on Delay Time

Rise Time

Turn off Delay Time

Fall Time

––

––

––

––

30

40

62

30

40

60

74

40

nsec

Diode Forward Voltage

––

0.85

1.2

V

Diode Reverse Recovery Time

Reverse Recovery Charge

210

2

900

7.7

970

8.9

nsec

μC

Input Capacitance

Output Capacitance

Reverse Transfer Capacitance

f = 1 MHz

––

––

––

1450

180

40

––

––

––

pF