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STY112N65M5 Scheda tecnica(PDF) 7 Page - STMicroelectronics

Il numero della parte STY112N65M5
Spiegazioni elettronici  N-channel 650 V, 0.019 廓, 96 A, MDmesh??V Power MOSFET in Max247 package
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Produttore elettronici  STMICROELECTRONICS [STMicroelectronics]
Homepage  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

STY112N65M5 Scheda tecnica(HTML) 7 Page - STMicroelectronics

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STY112N65M5
Electrical characteristics
Doc ID 15321 Rev 3
7/
Figure 8.
Gate charge vs gate-source voltage Figure 9.
Capacitance variations
Figure 10.
Normalized gate threshold voltage
vs temperature
Figure 11.
Normalized on resistance vs
temperature
Figure 12.
Output capacitance stored energy
Figure 13.
Switching losses vs gate resistance
(1)
1.
Eon including reverse recovery of a SiC diode
VGS
6
4
2
0
0
100
Qg(nC)
(V)
400
8
200
300
10
VDD=520V
ID=48A
12
300
200
100
0
400
500
VDS
VDS (V)
AM08897v1
VGS(th)
1.00
0.90
0.80
0.70
-50
0
TJ(°C)
(norm)
-25
1.10
75
25
50
100
ID=250µA
AM08899v1
RDS(on)
1.7
1.3
0.9
0.5
-50
0
TJ(°C)
(norm)
-25
75
25
50
100
2.1
VGS=10V
AM08900v1
Eoss
30
20
10
0
0
100
VDS(V)
(µJ)
400
40
200 300
50
60
500
600
70
AM08901v1
E
3000
2000
1000
0
0
20
RG(
Ω)
(
μJ)
10
30
4000
5000
6000
40
ID=64A
VDD=400V
TJ=25°C
Eon
Eoff
AM08902v1


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