74HC125S14-13 datasheet(4/9 Pages) DIODES

Il numero della parte	74HC125S14-13

Spiegazioni elettronici	QUADRUPLE 3-STATE BUFFERS OE LOW

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Produttore elettronici	DIODES [Diodes Incorporated]

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74HC125

Document number: DS35326 Rev. 3 - 2

4 of 9

www.diodes.com

January 2013

74HC125

Electrical Characteristics (@TA = +25°C, unless otherwise specified.)

Symbol

Parameter

Test Conditions

VCC

TA = -40°C to +85°C

TA = -40°C to +125°C

Unit

Min

Max

Min

Max

VIH

High-level Input

Voltage

2.0V

1.5

V

4.5V

3.15

6.0V

4.2

VIL

Low-level Input

voltage

2.0V

0.5

V

4.5V

1.35

6.0V

1.8

VOH

High-level Output

Voltage

IOH = -20μA

2.0V

1.9

V

IOH = -20μA

4.5V

4.4

IOH = -20μA

6.0V

5.9

IOH = -4.0mA

4.5V

3.84

3.7

IOH = -5.2mA

6.0V

5.34

5.2

VOL

Low-level Output

Voltage

IOL = 20μA

2.0V

0.1

V

IOL = 20μA

4.5V

0.1

IOL = 20μA

6.0V

0.1

IOL = 4mA

4.5V

0.33

0.44

IOL = 5.2mA

6.0V

0.33

0.44

IOZ

Z State

Leakage Current

VO = 0 to 6.0V

VI = GND or 6.0V

6.0V

± 5.0

± 10

μA

II

Input Current

VI = GND to 5.5V

6.0V

± 1

μA

ICC

Supply Current

VI = GND or VCC, IO = 0

6.0V

20

40

μA

Switching Characteristics

Symbol

Parameter

Test

Conditions

VCC

TA = +25°C

-40°C to +85°C

-40°C to +125°C

Unit

Min

Typ.

Max

tPD

Propagation

Delay AN to YN

Figure 1

CL = 50 pF

2.0V

—

30

100

125

150

ns

4.5V

—

11

20

25

30

6.0V

—

9

17

21

26

tEN

Enable Time

OEN to YN

Figure 1

CL = 50 pF

2.0V

—

41

125

155

190

ns

4.5V

—

15

25

31

38

6.0V

—

12

21

26

32

tDIS

Disable Time

OE to YN

Figure 1

CL = 50 pF

2.0V

—

41

125

155

190

ns

4.5V

—

15

25

31

38

6.0V

—

12

21

26

32

tt

Transition time

Figure 1

CL = 50 pF

2.0V

—

14

60

75

90

ns

4.5V

—

5

12

15

18

6.0V

—

4

10

13

15

Operating Characteristics (@TA = +25°C, unless otherwise specified.)

Parameter

Test Conditions

VCC = 6V

Unit

Typ

Cpd

Power Dissipation

Capacitance per Gate

f = 1MHz

22

pF

CI

Input Capacitance

VI = VCC – or GND

4

pF

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