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STP20NM65N Scheda tecnica(PDF) 7 Page - STMicroelectronics |
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STP20NM65N Scheda tecnica(HTML) 7 Page - STMicroelectronics |
7 / 16 page STP20NM65N, STF20NM65N Electrical characteristics Doc ID 13845 Rev 2 7/16 Figure 8. Normalized BVDSS vs temperature Figure 9. Static drain-source on resistance Figure 10. Gate charge vs gate-source voltage Figure 11. Capacitance variations Figure 12. Normalized gate threshold voltage vs temperature Figure 13. Normalized on resistance vs temperature BVDSS -50 0 TJ(°C) (norm) -25 75 25 50 100 0.93 0.95 0.97 1.01 1.03 1.05 0.99 1.07 ID=1mA AM09142v1 RDS(on) 0.245 0.240 0.235 0 4 ID(A) ( Ω) 2 6 0.250 0.255 VGS=10V 10 8 12 14 0.260 AM09143v1 VGS 6 4 2 0 0 10 Qg(nC) (V) 40 8 20 30 10 VDD=520V ID=15A 50 12 300 200 100 0 400 500 VDS AM09144v1 C 1000 100 10 1 0.1 10 VDS(V) (pF) 1 100 Ciss Coss Crss AM09145v1 VGS(th) 1.00 0.90 0.80 0.70 -50 0 TJ(°C) (norm) -25 1.10 75 25 50 100 ID=250µA AM09146v1 RDS(on) 1.9 1.3 0.9 0.5 -50 0 TJ(°C) (norm) -25 75 25 50 100 0.7 1.1 1.5 1.7 2.1 ID=7.5A AM09147v1 |
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