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FQD17P06 Scheda tecnica(PDF) 1 Page - Fairchild Semiconductor |
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FQD17P06 Scheda tecnica(HTML) 1 Page - Fairchild Semiconductor |
1 / 9 page April 2014 ©2001 Fairchild Semiconductor Corporation FQD17P06 / FQU17P06 Rev C3 www.fairchildsemi.com 1 FQD17P06 / FQU17P06 P-Channel QFET® MOSFET -60 V, -12 A, 135 mΩ Description Features Absolute Maximum Ratings TC=25°Cunless otherwise noted. Thermal Characteristics This P-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, audio amplifier, DC motor control, and variable switching power applications. • -12 A, -60 V, RDS(on) = 135 mΩ (Max.) @ VGS = -10 V, ID = -6 A • Low Gate Charge (Typ. 21 nC) • Low Crss (Typ. 80 pF) • 100% Avalanche Tested Symbol Parameter FQD17P06 / FQU17P06 Unit VDSS Drain-Source Voltage -60 V ID Drain Current - Continuous (TC = 25°C) -12 A - Continuous (TC = 100°C) -7.6 A IDM Drain Current - Pulsed (Note 1) -48 A VGSS Gate-Source Voltage ± 25 V EAS Single Pulsed Avalanche Energy (Note 2) 300 mJ IAR Avalanche Current (Note 1) -12 A EAR Repetitive Avalanche Energy (Note 1) 4.4 mJ dv/dt Peak Diode Recovery dv/dt (Note 3) -7.0 V/ns PD Power Dissipation (TA = 25°C) * 2.5 W Power Dissipation (TC = 25°C) 44 W - Derate above 25°C 0.35 W/°C TJ, TSTG Operating and Storage Temperature Range -55 to +150 °C TL Maximum lead temperature for soldering purposes, 1/8” from case for 5 seconds. 300 °C Symbol Parameter FQD17P06 / FQU17P06 Unit RθJC Thermal Resistance, Junction-to-Case, Max. 2.85 °C/W RθJA Thermal Resistance, Junction to Ambient (Minimum Pad of 2-oz Copper), Max. 110 RθJA Thermal Resistance, Junction to Ambient (*1 in2 Pad of 2-oz Copper), Max. 50 * When mounted on the minimum pad size recommended (PCB Mount) G D S I-PAK D-PAK G S D G S D |
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