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IRF3415STRR Scheda tecnica(PDF) 4 Page - International Rectifier |
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IRF3415STRR Scheda tecnica(HTML) 4 Page - International Rectifier |
4 / 11 page IRF3415S/L Fig 8. Maximum Safe Operating Area Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage Fig 7. Typical Source-Drain Diode Forward Voltage 1 10 100 0 1000 2000 3000 4000 5000 6000 V , Drain-to-Source Voltage (V) DS V C C C = = = = 0V, C C C f = 1MHz + C + C C SHORTED GS iss gs gd , ds rss gd oss ds gd Ciss Coss Crss 0 40 80 120 160 200 0 4 8 12 16 20 Q , Total Gate Charge (nC) G FOR TEST CIRCUIT SEE FIGURE I = D 13 22A V = 30V DS V = 75V DS V = 120V DS 0.1 1 10 100 1000 0.2 0.6 1.0 1.4 1.8 V ,Source-to-Drain Voltage (V) SD V = 0 V GS T = 25 C J o T = 175 C J o 1 10 100 1000 1 10 100 1000 OPERATION IN THIS AREA LIMITED BY RDS(on) Single Pulse T T = 175 C = 25 C J C o o V , Drain-to-Source Voltage (V) DS 10us 100us 1ms 10ms |
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