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MC-4R256FKK6K Scheda tecnica(PDF) 8 Page - Elpida Memory |
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MC-4R256FKK6K Scheda tecnica(HTML) 8 Page - Elpida Memory |
8 / 13 page MC-4R256FKK6K Preliminary Data Sheet E0268N10 (Ver. 1.0) 8 Electrical Specifications Absolute Maximum Ratings Symbol Parameter MIN. MAX. Unit VI,ABS Voltage applied to any RSL or CMOS signal pad with respect to GND −0.3 VDD + 0.3 V VDD,ABS Voltage on VDD with respect to GND −0.5 VDD + 1.0 V TSTORE Storage temperature −50 +100 °C Caution Exposing the device to stress above those listed in Absolute Maximum Ratings could cause permanent damage. The device is not meant to be operated under conditions outside the limits described in the operational section of this specification Exposure to Absolute Maximum Rating conditions for extended periods may affect device reliability. DC Recommended Electrical Conditions Symbol Parameter and conditions MIN. MAX. Unit VDD Supply voltage Note 2.50 − 0.13 2.50 + 0.13 V VCMOS CMOS I/O power supply at pad 2.5V controllers VDD VDD V 1.8V controllers 1.8 − 0.1 1.8 + 0.2 VREF Reference voltage Note 1.4 − 0.2 1.4 + 0.2 V SVDD Serial Presence Detector- positive power supply 2.2 3.6 V VTERM Termination Voltage 1.89 − 0.09 1.89 + 0.09 V Note: See Direct RDRAM datasheet for more details. |
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