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MC-4R256FKE8S Scheda tecnica(PDF) 1 Page - Elpida Memory

Il numero della parte MC-4R256FKE8S
Spiegazioni elettronici  Direct Rambus DRAM SO-RIMM Module 256M-BYTE (128M-WORD x 18-BIT)
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Produttore elettronici  ELPIDA [Elpida Memory]
Homepage  http://www.elpida.com/en
Logo ELPIDA - Elpida Memory

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The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local Elpida Memory, Inc. for
availability and additional information.
MOS INTEGRATED CIRCUIT
MC-4R256FKE8S
Direct Rambus DRAM SO-RIMM
TM Module
256M-BYTE (128M-WORD x 18-BIT)
DATA SHEET
Document No. E0138N30 (Ver. 3.0)
Date Published June 2002 (K) Japan
URL: http://www.elpida.com
Elpida Memory, Inc. is a joint venture DRAM company of NEC Corporation and Hitachi, Ltd.
Elpida Memory,Inc. 2001-2002
Description
The Direct Rambus SO-RIMM module is a general-purpose high-performance memory module subsystem suitable
for use in a broad range of applications including computer memory, mobile personal computers, networking
systems, and other applications where high bandwidth and low latency are required.
MC-4R256FKE8S modules consists of eight 288M Direct Rambus DRAM (Direct RDRAM) devices (
µPD488588).
These are extremely high-speed CMOS DRAMs organized as 16M words by 18 bits. The use of Rambus Signaling
Level (RSL) technology permits 800MHz transfer rates while using conventional system and board design
technologies.
Direct RDRAM devices are capable of sustained data transfers at 1.25 ns per two bytes (10 ns per 16 bytes).
The architecture of the Direct RDRAM enables the highest sustained bandwidth for multiple, simultaneous,
randomly addressed memory transactions. The separate control and data buses with independent row and column
control yield high bus efficiency. The Direct RDRAM's multi-bank architecture supports up to four simultaneous
transactions per device.
Features
• 160 edge connector pads with 0.65mm pad spacing
• 256 MB Direct RDRAM storage
• Each RDRAMhas 32 banks, for 256 banks total on module
• Gold plated contacts
• RDRAMs use Chip Scale Package (CSP)
• Serial Presence Detect support
• Operates from a 2.5 V supply
• Powerdown self refresh modes
• Separate Row and Column buses for higher efficiency


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