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SS1P3-M3 Scheda tecnica(PDF) 1 Page - Vishay Siliconix

Il numero della parte SS1P3-M3
Spiegazioni elettronici  High Current Density Surface Mount Schottky Barrier Rectifiers
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Produttore elettronici  VISHAY [Vishay Siliconix]
Homepage  http://www.vishay.com
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SS1P3, SS1P4
www.vishay.com
Vishay General Semiconductor
Revision: 25-Jun-12
1
Document Number: 88935
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
High Current Density Surface Mount
Schottky Barrier Rectifiers
TYPICAL APPLICATIONS
For
use
in
low
voltage
high
frequency
inverters,
freewheeling, DC/DC converters and polarity protection
applications.
Note
• These devices are not AEC-Q101 qualified
FEATURES
• Very low profile - typical height of 1.0 mm
• Ideal for automated placement
• Low forward voltage drop, low power losses
• High efficiency
• Low thermal resistance
• Meets MSL level 1, per J-STD-020, LF maximum
peak of 260 °C
• Material categorization: For definitions of compliance
please see www.vishay.com/doc?99912
MECHANICAL DATA
Case: DO-220AA (SMP)
Molding compound meets UL 94 V-0 flammability rating
Base P/N-M3 - halogen-free, RoHS compliant, and
commercial grade
Terminals:
Matte
tin
plated
leads,
solderable
per
J-STD-002 and JESD 22-B102
M3 suffix meets JESD 201 class 1A whisker test
Polarity: Color band denotes the cathode end
PRIMARY CHARACTERISTICS
IF(AV)
1.0 A
VRRM
30 V, 40 V
IFSM
30 A
EAS
10 mJ
VF
0.40 V, 0.45 V
TJ max.
150 °C
DO-220AA (SMP)
eSMP
® Series
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
SS1P3
SS1P4
UNIT
Device marking code
13
14
Maximum repetitive peak reverse voltage
VRRM
30
40
V
Maximum average forward rectified current (fig. 1)
IF(AV)
1.0
A
Peak forward surge current 10 ms single half sine-wave superimposed
on rated load
IFSM
30
A
Non-repetitive avalanche energy at TJ = 25 °C, IAS = 1.5 A, L = 10 mH
EAS
10
mJ
Voltage rate of change (rated VR)
dV/dt
10 000
V/μs
Operating junction and storage temperature range
TJ, TSTG
- 55 to + 150
°C


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