2SC4957 datasheet(3/5 Pages) CEL

Il numero della parte	2SC4957

Spiegazioni elettronici	NPN EPITAXIAL SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW-NOISE AMPLIFICATION 4-PIN SUPER MINIMOLD

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Produttore elettronici	CEL [California Eastern Labs]

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Data Sheet PU10520EJ01V0DS

3

2SC4957

TYPICAL CHARACTERISTICS (TA = +25°C, unless otherwise specified)

Collector to Emitter Voltage VCE (V)

COLLECTOR CURRENT vs.

COLLECTOR TO EMITTER VOLTAGE

Collector Current IC (mA)

COLLECTOR CURRENT

DC CURRENT GAIN vs.

Collector Current IC (mA)

vs. COLLECTOR CURRENT

GAIN BANDWIDTH PRODUCT

Ambient Temperature TA (˚C)

TOTAL POWER DISSIPATION

vs. AMBIENT TEMPERATURE

Collector to Base Voltage VCB (V)

vs. COLLECTOR TO BASE VOLTAGE

REVERSE TRANSFER CAPACITANCE

Base to Emitter Voltage VBE (V)

COLLECTOR CURRENT vs.

BASE TO EMITTER VOLTAGE

200

100

0

50

100

150

180 mW

Free Air

0.1

0.5

0.2

0.3

0.4

0.5

1

2

5

10

20

f = 1 MHZ

50

40

30

20

10

0

0.5

1.0

VCE = 3 V

60

0

1

500 A

400 A

300 A

200 A

IB = 100 A

50

40

30

20

10

2345

6

μ

0.1

200

100

0

0.2 0.5 1 2

5 10 20

50 100

VCE = 3 V

VCE = 5 V

14

0.5

12

10

8

6

4

2

1

2

5

10

20

50

VCE = 1 V

f = 2 GHZ

VCE = 3 V

VCE = 5 V

Remark The graphs indicate nominal characteristics.

NE68539 /

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