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BY297 Scheda tecnica(PDF) 1 Page - EIC discrete Semiconductors |
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BY297 Scheda tecnica(HTML) 1 Page - EIC discrete Semiconductors |
1 / 2 page BY296 - BY299 FAST RECOVERY RECTIFIER DIODES PRV : 100 - 800 Volts Io : 2.0 Amperes FEATURES : * High current capability * High surge current capability * High reliability * Low reverse current * Low forward voltage drop * Fast switching for high efficiency MECHANICAL DATA : * Case : DO-201AD Molded plastic * Epoxy : UL94V-O rate flame retardant * Lead : Axial lead solderable per MIL-STD-202, Method 208 guaranteed * Polarity : Color band denotes cathode end * Mounting position : Any * Weight : 1.16 grams MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Rating at 25 °C ambient temperature unless otherwise specified. Single phase, half wave, 60 Hz, resistive or inductive load. For capacitive load, derate current by 20%. SYMBOL BY296 BY297 BY298 BY299 UNIT Maximum Recurrent Peak Reverse Voltage VRRM 100 200 400 800 V Maximum RMS Voltage VRMS 70 140 280 560 V Maximum DC Blocking Voltage VDC 100 200 400 800 V Maximum Average Forward Current 0.375"(9.5mm) Lead Length Ta = 50 °C Peak Forward Surge Current, 8.3ms Single half sine wave Superimposed on rated load (JEDEC Method) Maximum Peak Forward Voltage at IF = 2.0 Amps. VF 1.3 V Maximum DC Reverse Current Ta = 25 °C IR 10 µA at Rated DC Blocking Voltage Ta = 100 °C IR(H) 500 µA Maximum Reverse Recovery Time ( Note 1 ) Trr 250 ns Typical Junction Capacitance ( Note 2 ) CJ 28 pf Junction Temperature Range TJ - 50 to + 125 °C Storage Temperature Range TSTG - 50 to + 150 °C Notes : ( 1 ) Reverse Recovery Test Conditions : IF = 0.5 A, IR = 1.0 A, Irr = 0.25 A. ( 2 ) Measured at 1.0 MHz and applied reverse voltage of 4.0 VDC Page 1 of 2 Rev. 01 : Apr. 2, 2002 RATING A A IF(AV) IFSM 70 2.0 DO-201AD 0.21 (5.33) 0.19 (4.82) 0.375 (9.52) 0.285 (7.24) 0.052 (1.32) 0.048 (1.22) 1.00 (25.4) MIN. 1.00 (25.4) MIN. Dimensions in inches and ( millimeters ) |
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