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IXYH20N120C3D1 Scheda tecnica(PDF) 1 Page - IXYS Corporation |
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IXYH20N120C3D1 Scheda tecnica(HTML) 1 Page - IXYS Corporation |
1 / 7 page © 2013 IXYS CORPORATION, All Rights Reserved IXYH20N120C3D1 V CES = 1200V I C110 = 17A V CE(sat) 3.4V t fi(typ) = 108ns DS100485B(8/13) G = Gate C = Collector E = Emitter Tab = Collector TO-247 AD G C E Tab High-Speed IGBT for 20-50 kHz Switching Symbol Test Conditions Characteristic Values (T J = 25C, Unless Otherwise Specified) Min. Typ. Max. BV CES I C = 250 A, V GE = 0V 1200 V V GE(th) I C = 250 A, V CE = VGE 3.0 5.0 V I CES V CE = VCES, VGE = 0V 25 A T J = 125C 350 μA I GES V CE = 0V, VGE = 20V 100 nA V CE(sat) I C = 20A, V GE = 15V, Note 1 3.4 V T J = 150C 4.0 V Symbol Test Conditions Maximum Ratings V CES T J = 25°C to 150°C 1200 V V CGR T J = 25°C to 150°C, R GE = 1M 1200 V V GES Continuous ±20 V V GEM Transient ±30 V I C25 T C = 25°C 36 A I C110 T C = 110°C 17 A I F110 T C = 110°C 20 A I CM T C = 25°C, 1ms 88 A I A T C = 25°C 10 A E AS T C = 25°C 400 mJ SSOA V GE = 15V, TVJ = 150°C, RG = 10 I CM = 40 A (RBSOA) Clamped Inductive Load @V CE VCES P C T C = 25°C 230 W T J -55 ... +150 °C T JM 150 °C T stg -55 ... +150 °C T L Maximum Lead Temperature for Soldering 300 °C T SOLD 1.6 mm (0.062in.) from Case for 10s 260 °C M d Mounting Torque 1.13/10 Nm/lb.in. Weight 6g 1200V XPTTM IGBT GenX3TM w/ Diode Features Optimized for Low Switching Losses Square RBSOA Positive Thermal Coefficient of Vce(sat) Anti-Parallel Ultra Fast Diode Avalanche Rated International Standard Package Advantages High Power Density Low Gate Drive Requirement Applications High Frequency Power Inverters UPS Motor Drives SMPS PFC Circuits Battery Chargers Welding Machines Lamp Ballasts |
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