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SI1023CX Scheda tecnica(PDF) 2 Page - Vishay Siliconix |
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SI1023CX Scheda tecnica(HTML) 2 Page - Vishay Siliconix |
2 / 8 page www.vishay.com 2 Document Number: 63303 S11-1384-Rev. A, 11-Jul-11 Vishay Siliconix Si1023CX This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Notes: a. Pulse test; pulse width 300 µs, duty cycle 2 %. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. SPECIFICATIONS (TJ = 25 °C, unless otherwise noted) Parameter Symbol Test Conditions Min. Typ. Max. Unit Static Drain-Source Breakdown Voltage VDS VGS = 0 V, ID = - 250 µA - 20 V VDS Temperature Coefficient V DS/TJ ID = - 250 µA - 12 mV/°C VGS(th) Temperature Coefficient V GS(th)/TJ 1.8 Gate-Source Threshold Voltage VGS(th) VDS = VGS, ID = - 250 µA - 0.4 - 1 V Gate-Source Leakage IGSS VDS = 0 V, VGS = ± 8 V ± 30 µA VDS = 0 V, VGS = ± 4.5 V ± 1 Zero Gate Voltage Drain Current IDSS VDS = - 20 V, VGS = 0 V - 1 VDS = - 20 V, VGS = 0 V, TJ = 85 °C - 10 On-State Drain Currenta ID(on) VDS = 5 V, VGS = - 4.5 V - 1.5 A Drain-Source On-State Resistancea RDS(on) VGS = - 4.5 V, ID = - 0.35 A 0.630 0.756 VGS = - 2.5 V, ID = - 0.35 A 0.865 1.038 VGS = - 1.8 V, ID = - 0.1 A 1.20 1.44 VGS = - 1.5 V, ID = - 0.05 A 1.6 2.4 Forward Transconductance gfs VDS = - 10 V, ID = - 0.4 A 1S Dynamicb Input Capacitance Ciss VDS = - 10 V, VGS = 0 V, f = 1 MHz 45 pF Output Capacitance Coss 15 Reverse Transfer Capacitance Crss 10 Total Gate Charge Qg VDS = - 10 V, VGS = - 4.5 V, ID = - 0.4 A 1.65 2.50 nC VDS = - 10 V, VGS = - 2.5 V, ID = - 0.4 A 12 Gate-Source Charge Qgs 0.2 Gate-Drain Charge Qgd 0.26 Gate Resistance Rg f = 1 MHz 2.4 12 24 Turn-On Delay Time td(on) VDD = - 10 V, RL = 33.3 ID - 0.3 A, VGEN = - 4.5 V, Rg = 1 918 ns Rise Time tr 10 20 Turn-Off DelayTime td(off) 10 20 Fall Time tf 816 Turn-On Delay Time td(on) VDD = - 10 V, RL = 33.3 ID - 0.3 A, VGEN = - 8 V, Rg = 1 12 Rise Time tr 816 Turn-Off DelayTime td(off) 918 Fall Time tf 510 Drain-Source Body Diode Characteristics Pulse Diode Forward Currenta ISM - 1.5 A Body Diode Voltage VSD IS = - 0.3 A - 0.8 - 1.2 V Body Diode Reverse Recovery Time trr IF = - 0.3 A, dI/dt = 100 A/µs 16 24 ns Body Diode Reverse Recovery Charge Qrr 816 nC Reverse Recovery Fall Time ta 11 ns Reverse Recovery Rise Time tb 5 |
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