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2SD1297 Scheda tecnica(PDF) 2 Page - Savantic, Inc. |
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2SD1297 Scheda tecnica(HTML) 2 Page - Savantic, Inc. |
2 / 3 page SavantIC Semiconductor Product Specification 2 Silicon NPN Power Transistors 2SD1297 CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CEO Collector-emitter breakdown voltage IC=30mA ;IB=0 100 V VCEsat Collector-emitter saturation voltage IC=15A ;IB=30mA 1.5 V VBEsat Base-emitter saturation voltage IC=15A ;IB=30mA 2.2 V ICBO Collector cut-off current VCB=100V; IE=0 10 µA IEBO Emitter cut-off current VEB=5V; IC=0 5 mA hFE-1 DC current gain IC=15A ; VCE=2V 1000 30000 hFE-2 DC current gain IC=25A ; VCE=2V 250 Switching times ton Turn-on time 1.0 µs tstg Storage time 5.0 µs tf Fall time IC=15A; IB1=-IB2=30mA VCC=60V;RL=4@ 2.0 µs hFE-1 Classifications M L K J 1000-3000 2000-5000 4000-10000 8000-30000 |
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