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BAW56WT1G Scheda tecnica(PDF) 2 Page - ON Semiconductor

Il numero della parte BAW56WT1G
Spiegazioni elettronici  Dual Switching Diode, Common Anode
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Produttore elettronici  ONSEMI [ON Semiconductor]
Homepage  http://www.onsemi.com
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BAW56WT1G Scheda tecnica(HTML) 2 Page - ON Semiconductor

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BAW56WT1G, SBAW56WT1G
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ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted)
Characteristic
Symbol
Min
Max
Unit
OFF CHARACTERISTICS
Reverse Breakdown Voltage
(I(BR) = 100 mA)
V(BR)
70
V
Reverse Voltage Leakage Current
(VR = 25 V, TJ = 150C)
(VR = 70 V)
(VR = 70 V, TJ = 150C)
IR
30
2.5
50
mA
Diode Capacitance
(VR = 0, f = 1.0 MHz)
CD
2.0
pF
Forward Voltage
(IF = 1.0 mA)
(IF = 10 mA)
(IF = 60 mA)
(IF = 150 mA)
VF
715
855
1000
1250
mV
Reverse Recovery Time
(IF = IR = 10 mA, RL = 100 W, IR(REC) = 1.0 mA) (Figure 1)
trr
6.0
ns
Notes: 1. A 2.0 kW variable resistor adjusted for a Forward Current (IF) of 10 mA.
Notes: 2. Input pulse is adjusted so IR(peak) is equal to 10 mA.
Notes: 3. tp » trr
+10 V
2.0 k
820
W
0.1
mF
DUT
VR
100
mH
0.1
mF
50
W OUTPUT
PULSE
GENERATOR
50
W INPUT
SAMPLING
OSCILLOSCOPE
tr
tp
t
10%
90%
IF
IR
trr
t
iR(REC) = 1.0 mA
OUTPUT PULSE
(IF = IR = 10 mA; MEASURED
at iR(REC) = 1.0 mA)
IF
INPUT SIGNAL
Figure 1. Recovery Time Equivalent Test Circuit


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