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2SC2555 Scheda tecnica(PDF) 1 Page - Savantic, Inc. |
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2SC2555 Scheda tecnica(HTML) 1 Page - Savantic, Inc. |
1 / 4 page SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2SC2555 DESCRIPTION ·With TO-3P(I) package ·High collector breakdown voltage VCEO=400V(Min) ·Excellent switching times : tr=1.0µs(Max.) tf=1.0µs(Max.)@ IC=4A APPLICATIONS ·Switching regulator and high voltage switching applications ·High speed DC-DC converter applications PINNING PIN DESCRIPTION 1 Base 2 Collector;connected to mounting base 3 Emitter Absolute maximum ratings(Ta=25 ) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 500 V VCEO Collector-emitter voltage Open base 400 V VEBO Emitter-base voltage Open collector 7 V IC Collector current-DC 8 A ICM Collector current-peak 10 A IB Base current 4 A Ta=25 2.5 PC Collector power dissipation TC=25 80 W Tj Junction temperature 150 Tstg Storage temperature -55~150 Fig.1 simplified outline (TO-3P(I)) and symbol |
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