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2SC2149 Scheda tecnica(PDF) 1 Page - NEC |
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2SC2149 Scheda tecnica(HTML) 1 Page - NEC |
1 / 8 page © 1981 DATA SHEET SILICON TRANSISTORS DESCRIPTION The 2SC2148, 2SC2149 are economical microwave transistors encapsulated into new hermetic stripline packages, "micro X". These are designed for small signal amplifier, low noise amplifier, and oscillator applications in the L to C band, and CML circuit use. FEATURES 2SC2148 NF: 2.1 dB TYP. @f = 500 MHz 2SC2149 NF: 2.6 dB TYP. @f = 2.0 GHz Derating curves of the 2SC2148, 2SC2149. The maximum junction temperature of these transistors is allowed up to 200 °C, but the ambient or storage temperature is limitted to 150 °C. The operating junction temperature is estimated with power consumption (PT) and thermal resistance mentioned on these derating curves. 2SC2148, 2SC2149 Document No. P11809EJ2V0DS00 (2nd edition) (Previous No. TC-1428) Date Published August 1996 P Printed in Japan MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR PACKAGE DIMENSIONS (Unit : mm) 1 2 0.5±0.05 2.55±0.2 2.1 φ 3 4 4.0 MIN. 1. 2. 3. 4. Emitter Collector Emitter Base 4.0 MIN. 45 ° The information in this document is subject to change without notice. |
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