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FQP90N10V2 Scheda tecnica(PDF) 1 Page - Fairchild Semiconductor

Il numero della parte FQP90N10V2
Spiegazioni elettronici  100V N-Channel MOSFET
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Produttore elettronici  FAIRCHILD [Fairchild Semiconductor]
Homepage  http://www.fairchildsemi.com
Logo FAIRCHILD - Fairchild Semiconductor

FQP90N10V2 Scheda tecnica(HTML) 1 Page - Fairchild Semiconductor

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©2004 Fairchild Semiconductor Corporation
Rev. A1, April 2004
QFET®
FQP90N10V2/FQPF90N10V2
100V N-Channel MOSFET
General Description
These N-Channel enhancement mode power field effect
transistors are produced using Fairchild’s proprietary,
planar stripe, DMOS technology.
This advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the
avalanche and commutation mode. These devices are well
suited for DC to DC converters, sychronous rectification,
and other applications lowest Rds(on) is required.
Features
• 90 A, 100V, RDS(on) = 0.01Ω @VGS = 10 V
• Low gate charge ( typical 147 nC)
• Low Crss ( typical 300 pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
Absolute Maximum Ratings T
C = 25°C unless otherwise noted
* Drain current limited by maximum junction temperature.
Thermal Characteristics
Symbol
Parameter
FQP90N10V2
FQPF90N10V2
Units
VDSS
Drain-Source Voltage
100
V
ID
Drain Current
- Continuous (TC = 25°C)
90
90 *
A
- Continuous (TC = 100°C)
68
68 *
A
IDM
Drain Current
- Pulsed
(Note 1)
360
360 *
A
VGSS
Gate-Source Voltage
± 30
V
EAS
Single Pulsed Avalanche Energy
(Note 2)
2430
mJ
IAR
Avalanche Current
(Note 1)
90
A
EAR
Repetitive Avalanche Energy
(Note 1)
25
mJ
dv/dt
Peak Diode Recovery dv/dt
(Note 3)
4.5
V/ns
PD
Power Dissipation (TC = 25°C)
250
83
W
- Derate above 25°C
1.67
0.55
W/°C
TJ, TSTG
Operating and Storage Temperature Range
-55 to +175
°C
TL
Maximum lead temperature for soldering purposes,
1/8" from case for 5 seconds
300
°C
Symbol
Parameter
FQP90N10V2
FQPF90N10V2
Units
RθJC
Thermal Resistance, Junction-to-Case
0.6
1.8
°C/W
RθJS
Thermal Resistance, Case-to-Sink Typ.
0.5
--
°C/W
RθJA
Thermal Resistance, Junction-to-Ambient
62.5
62.5
°C/W
TO-220
FQP Series
G
S
D
TO-220F
FQPF Series
G
S
D
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