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UFZ34L-TA3-T Scheda tecnica(PDF) 2 Page - Unisonic Technologies |
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UFZ34L-TA3-T Scheda tecnica(HTML) 2 Page - Unisonic Technologies |
2 / 6 page UFZ34 Preliminary Power MOSFET UNISONICTECHNOLOGIESCO.,LTD 2 of 6 www.unisonic.com.tw VER.a ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL RATINGS UNIT Drain-Source Voltage VDSS 60 V Gate-Source Voltage VGSS ±20 V Drain Current Continuous TC=25°C ID 28 A TC=100°C 20 A Pulsed (Note 1) IDM 112 A Avalanche Current (Note 1) IAR 17 A Avalanche Energy Single Pulsed (Note 2) EAS 97 mJ Repetitive (Note 1) EAR 6.8 mJ Peak Diode Recovery dv/dt (Note 3) dv/dt 5.0 V/ns Power Dissipation TC=25°C PD 68 W Linear Derating Factor 0.46 W/°C Junction Temperature TJ -55~+175 °C Storage Temperature Range TSTG -55~+175 °C Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. THERMAL CHARACTERISTICS PARAMETER SYMBOL RATING UNIT Junction to Ambient θJA 62 °C/W Junction to Case θJC 3.3 °C/W Notes: 1. Repetitive Rating: Pulse width limited by maximum junction temperature. 2. L=670µH, IAS=17A, RG=25Ω, Starting TJ=25°C. 3. ISD≤17A, di/dt≤200A/µs, VDD≤BVDSS, Starting TJ≤175°C. |
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