SEMICONDUCTOR

RoHS

RoHS

Nell High Power Products

UNIT

MIN.

0.45

0.24

THERMAL RESISTANCE

PARAMETER

Thermal resistance, case to heat sink

Thermal resistance, junction to case

SYMBOL

TYP.

MAX.

ºC/W

40

Thermal resistance, junction to ambient

UNIT

V

ns

μA

pF

nC

94

MAX.

250

200

-100

100

0.24

5200

310

23

120

100

1200

ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise specified)

C

I = 250μA,

D

V

= 0V

GS

TEST CONDITIONS

I = 1mA,

D

V

=V

DS

GS

V

=200V, V

=0V

DS

GS

T = 25°C

C

Fall time

Gate to source reverse leakage current

Input capacitance

Total gate charge

Output capacitance

PARAMETER

Rise time

Gate to source forward leakage current

Turn-on delay time

Reverse transfer capacitance

Breakdown voltage temperature coefficient

Drain to source breakdown voltage

Turn-off delay time

SYMBOL

▲

▲

V

/

(BR)DSS

13

Gate to source charge

Drain to source leakage current

V/ºC

Ω

nA

T =125°C

C

TYP.

MIN.

25.0

230

V

= 100V,

DD

(Note1,2)

V

= 10V

GS

I = 50A, R = 4.3Ω, R = 2.1Ω

D

G

D

V

= 25V, V

= 0V, f =1MHz

DS

GS

V

= -20V, V

= 0V

GS

DS

V

= 20V, V

= 0V

GS

DS

Forward transconductance

V

= 50V, l = 28A

DS

D

V

=160V, V

=0V

DS

GS

S

STATIC

DYNAMIC

42

V

= 160V,

DD

(Note1,2)

V

= 10V

GS

I = 50A,

D

0.055

Static drain to source on-state resistance

I = 28A, V

= 10V

D

GS

2.0

V

4.0

V

=V

, I =250μA

GS

DS

D

Gate threshold voltage

Gate to drain charge (Miller charge)

5

SOURCE TO DRAIN DIODE RATINGS AND CHARACTERISTICS (T = 25°C unless otherwise specified)

C

SYMBOL

PARAMETER

TEST CONDITIONS

MIN.

TYP.

MAX.

UNIT

Diode forward voltage

I

= 50A, V

= 0V

SD

GS

1.8

V

Continuous source to drain current

Integral reverse P-N junction

diode in the MOSFET

50

D (Drain)

G

(Gate)

S (Source)

A

Pulsed source current

200

Reverse recovery time

590

ns

I

= 50A, V

= 0V,

SD

GS

dI /dt = 100A/µs

F

Reverse recovery charge

4.8

μC

Note:

www.nellsemi.com

Page 2 of 7

IRF260 Series

24

390

7.2

110

nH

Internal drain inductance

Internal source inductance

Between lead, 6mm(0.25”) form

package and center of die contact