1

TP3061

MOTOROLA RF DEVICE DATA

The RF Line

UHF Power Transistor

The TP3061 is designed for 960 MHz mobile base stations in both analog and

digital applications. It incorporates high value emitter ballast resistors, gold

metallizations and offers a high degree of reliability and ruggedness. Including

double input and output matching networks, the TP3060 features high

impedances and is easy to match.

• Motorola Advanced Amplifier Concept Package

• Oxynitride Passivation

• Specified 26 Volts, 960 MHz Characteristics

Output Power = 45 Watts

Minimum Gain = 8.0 dB

Efficiency = 50%

• Circuit board photomaster available upon request by contacting

RF Tactical Marketing in Phoenix, AZ.

MAXIMUM RATINGS

Rating

Symbol

Value

Unit

Collector–Emitter Voltage

VCER

40

Vdc

Collector–Base Voltage

VCBO

48

Vdc

Emitter–Base Voltage

VEBO

4.0

Vdc

Collector Current — Continuous

IC

10

Adc

Total Device Dissipation @ TC = 25°C

Derate above 25

°C

PD

175

1.0

Watts

W/

°C

Storage Temperature Range

Tstg

– 65 to +150

°C

Operating Junction Temperature

TJ

200

°C

THERMAL CHARACTERISTICS

Characteristic

Symbol

Max

Unit

Thermal Resistance, Junction to Case (1) at 70

°C Case

R

θJC

1.2

°C/W

Characteristic

Symbol

Min

Typ

Max

Unit

OFF CHARACTERISTICS

Collector–Emitter Breakdown Voltage

(IC = 60 mA, RBE = 75 Ω)

V(BR)CER

40

—

—

Vdc

Emitter–Base Breakdown Voltage

(IC = 6.0 mAdc)

V(BR)EBO

3.5

—

—

Vdc

Collector–Base Breakdown Voltage (IE = 60 mAdc)

V(BR)CBO

48

—

—

Vdc

Collector–Emitter Leakage (VCE = 26 V, RBE = 75 Ω)

ICER

—

—

15

mA

NOTE:

(continued)

1. Thermal resistance is determined under specified RF operating condition.

Order this document

by TP3061/D

MOTOROLA

SEMICONDUCTOR TECHNICAL DATA

TP3061

45 W, 960 MHz

UHF POWER

TRANSISTOR

NPN SILICON

CASE 333A–02, STYLE 2

REV 6