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IRF1503STRLPBF Scheda tecnica(PDF) 1 Page - International Rectifier |
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IRF1503STRLPBF Scheda tecnica(HTML) 1 Page - International Rectifier |
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1 / 11 page  HEXFET® Power MOSFET This Stripe Planar design of HEXFET® Power MOSFETs utilizes the lastest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this HEXFET power MOSFET are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating. These benefits combine to make this design an extremely efficient and reliable device for use in a wide variety of applications. S D G VDSS = 30V RDS(on) = 3.3mΩ ID = 75A Description 07/14/10 www.irf.com 1 Benefits IRF1503SPbF IRF1503LPbF D2Pak IRF1503SPbF TO-262 IRF1503LPbF Parameter Typ. Max. Units RθJC Junction-to-Case ––– 0.75 RθCS Case-to-Sink, Flat, Greased Surface 0.50 ––– °C/W RθJA Junction-to-Ambient ––– 62 Thermal Resistance Parameter Max. Units ID @ TC = 25°C Continuous Drain Current, VGS @ 10V (Silicon limited) 190 ID @ TC = 100°C Continuous Drain Current, VGS @ 10V (See Fig.9) 130 A ID @ TC = 25°C Continuous Drain Current, VGS @ 10V (Package limited) 75 IDM Pulsed Drain Current 960 PD @TC = 25°C Power Dissipation 200 W Linear Derating Factor 1.3 W/°C VGS Gate-to-Source Voltage ± 20 V EAS Single Pulse Avalanche Energy 510 mJ EAS (tested) Single Pulse Avalanche Energy Tested Value 980 IAR Avalanche Current See Fig.12a, 12b, 15, 16 A EAR Repetitive Avalanche Energy mJ TJ Operating Junction and -55 to + 175 °C TSTG Storage Temperature Range Soldering Temperature, for 10 seconds 300 (1.6mm from case ) Mounting Torque, 6-32 or M3 screw 10 lbf•in (1.1N•m) Absolute Maximum Ratings l Advanced Process Technology l Ultra Low On-Resistance l 175°C Operating Temperature l Fast Switching l Repetitive Avalanche Allowed up to Tjmax PD - 95432A Typical Applications l Industrial Motor Drive |
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