Motore di ricerca datesheet componenti elettronici
  Italian  ▼
ALLDATASHEETIT.COM

X  

CD00269478 Scheda tecnica(PDF) 4 Page - STMicroelectronics

Il numero della parte CD00269478
Spiegazioni elettronici  Dual N-channel 450 V, 3.2 廓, 0.5 A SuperMESH3 Power MOSFET in SO-8
Download  10 Pages
Scroll/Zoom Zoom In 100%  Zoom Out
Produttore elettronici  STMICROELECTRONICS [STMicroelectronics]
Homepage  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

CD00269478 Scheda tecnica(HTML) 4 Page - STMicroelectronics

  CD00269478 Datasheet HTML 1Page - STMicroelectronics CD00269478 Datasheet HTML 2Page - STMicroelectronics CD00269478 Datasheet HTML 3Page - STMicroelectronics CD00269478 Datasheet HTML 4Page - STMicroelectronics CD00269478 Datasheet HTML 5Page - STMicroelectronics CD00269478 Datasheet HTML 6Page - STMicroelectronics CD00269478 Datasheet HTML 7Page - STMicroelectronics CD00269478 Datasheet HTML 8Page - STMicroelectronics CD00269478 Datasheet HTML 9Page - STMicroelectronics Next Button
Zoom Inzoom in Zoom Outzoom out
 4 / 10 page
background image
Electrical characteristics
STS1DN45K3
4/10
Doc ID 17338 Rev 1
2
Electrical characteristics
(TC = 25 °C unless otherwise specified)
Table 4.
On /off states
Symbol
Parameter
Test conditions
Min.
Typ.
Max. Unit
V(BR)DSS
Drain-source
breakdown voltage
ID = 1 mA, VGS = 0
450
V
IDSS
Zero gate voltage
drain current (VGS = 0)
VDS = Max rating
VDS = Max rating, TC=125 °C
1
50
µA
µA
IGSS
Gate-body leakage
current (VDS = 0)
VGS = ± 20 V
±10
µA
VGS(th)
Gate threshold voltage VDS = VGS, ID = 50 µA
3
3.75
4.5
V
RDS(on)
Static drain-source on
resistance
VGS = 10 V, ID = 0.5 A
3.2
3.8
Table 5.
Dynamic
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
Ciss
Coss
Crss
Input capacitance
Output capacitance
Reverse transfer
capacitance
VDS =25 V, f = 1 MHz,
VGS = 0
-
150
30
6
-
pF
pF
pF
Co(tr)
(1)
1.
Time related is defined as a constant equivalent capacitance giving the same charging time as Coss when
VDS increases from 0 to 80% VDSS
Equivalent
capacitance time
related
VDS = 0 to 360 V, VGS = 0
-TBD
-
pF
Co(er)
(2)
2.
Energy related is defined as a constant equivalent capacitance giving the same stored energy as Coss
when VDS increases from 0 to 80% VDSS
Equivalent
capacitance energy
related
-TBD
-
pF
RG
Intrinsic gate
resistance
f = 1 MHz open drain
-
TBD
-
Qg
Qgs
Qgd
Total gate charge
Gate-source charge
Gate-drain charge
VDD = 360 V, ID = 0.5 A,
VGS = 10 V
(see
Figure 3)
-
6
TBD
TBD
-
nC
nC
nC
Obsolete
Product(s)
- Obsolete
Product(s)


Codice articolo simile - CD00269478

Produttore elettroniciIl numero della parteScheda tecnicaSpiegazioni elettronici
logo
STMicroelectronics
CD00222640 STMICROELECTRONICS-CD00222640 Datasheet
1Mb / 18P
   N-channel 650 V, 0.070 ohm, 33 A MDmesh V Power MOSFET
CD00234048 STMICROELECTRONICS-CD00234048 Datasheet
947Kb / 25P
   Rail-to-rail input/output, 29 關A, 420 kHz CMOS operational
January 2013 Rev 5
CD00237391 STMICROELECTRONICS-CD00237391 Datasheet
3Mb / 177P
   ARM-based 32-bit MCU, 150DMIPs, up to 1 MB Flash/1284KB RAM
CD00251512 STMICROELECTRONICS-CD00251512 Datasheet
930Kb / 16P
   N-channel 525 V, 0.95 ohm, 6 A, DPAK, TO-220FP, TO-220
CD00253742 STMICROELECTRONICS-CD00253742 Datasheet
2Mb / 120P
   XL-density performance line ARM-based 32-bit MCU
More results

Descrizione simile - CD00269478

Produttore elettroniciIl numero della parteScheda tecnicaSpiegazioni elettronici
logo
STMicroelectronics
STN3N45K3 STMICROELECTRONICS-STN3N45K3 Datasheet
487Kb / 12P
   N-channel 450 V, 3.2 廓, 1.8 A, TO-92, SOT-223, IPAK SuperMESH3??Power MOSFET
logo
STATEK CORPORATION
STU3N45K3 STATEK-STU3N45K3 Datasheet
838Kb / 14P
   N-channel 450 V - 3.3 廓 typ., 1.8 A Zener-protected SuperMESH3??Power MOSFET in a IPAK package
logo
Fairchild Semiconductor
SSN1N45BTA FAIRCHILD-SSN1N45BTA Datasheet
722Kb / 8P
   N-Channel B-FET 450 V, 0.5 A, 4.25 廓
logo
STMicroelectronics
STS8DN3LLH5 STMICROELECTRONICS-STS8DN3LLH5 Datasheet
775Kb / 12P
   Dual N-channel 30 V, 0.0155 廓, 10 A, SO-8 STripFET??V Power MOSFET
STB4N62K3 STMICROELECTRONICS-STB4N62K3 Datasheet
1Mb / 18P
   N-channel 620 V, 1.7 廓, 3.8 A SuperMESH3 Power MOSFET
STF4N62K3 STMICROELECTRONICS-STF4N62K3 Datasheet
1Mb / 19P
   N-channel 620 V, 1.7 廓 typ., 3.8 A SuperMESH3 Power MOSFET
STS11N3LLH5 STMICROELECTRONICS-STS11N3LLH5 Datasheet
732Kb / 12P
   N-channel 30 V, 0.0117 廓, 11 A, SO-8 STripFET??V Power MOSFET
June 2011 Rev 2
STS14N3LLH5 STMICROELECTRONICS-STS14N3LLH5 Datasheet
419Kb / 12P
   N-channel 30 V, 0.005 廓, 14 A - SO-8 STripFET??V Power MOSFET
STS10N3LH5 STMICROELECTRONICS-STS10N3LH5 Datasheet
778Kb / 13P
   N-channel 30 V, 0.019 廓, 10 A, SO-8 STripFET??V Power MOSFET
logo
ON Semiconductor
NTMD6601NR2G ONSEMI-NTMD6601NR2G Datasheet
100Kb / 6P
   Power MOSFET 80 V, 2.2 A, Dual N-Channel, SO-8
February, 2008 - Rev. 0
More results


Html Pages

1 2 3 4 5 6 7 8 9 10


Scheda tecnica Scarica

Go To PDF Page


Link URL




Privacy Policy
ALLDATASHEETIT.COM
Lei ha avuto il aiuto da alldatasheet?  [ DONATE ] 

Di alldatasheet   |   Richest di pubblicita   |   contatti   |   Privacy Policy   |   scambio Link   |   Ricerca produttore
All Rights Reserved©Alldatasheet.com


Mirror Sites
English : Alldatasheet.com  |   English : Alldatasheet.net  |   Chinese : Alldatasheetcn.com  |   German : Alldatasheetde.com  |   Japanese : Alldatasheet.jp
Russian : Alldatasheetru.com  |   Korean : Alldatasheet.co.kr  |   Spanish : Alldatasheet.es  |   French : Alldatasheet.fr  |   Italian : Alldatasheetit.com
Portuguese : Alldatasheetpt.com  |   Polish : Alldatasheet.pl  |   Vietnamese : Alldatasheet.vn
Indian : Alldatasheet.in  |   Mexican : Alldatasheet.com.mx  |   British : Alldatasheet.co.uk  |   New Zealand : Alldatasheet.co.nz
Family Site : ic2ic.com  |   icmetro.com