KSD363R datasheet(1/4 Pages) FAIRCHILD

Il numero della parte	KSD363R

Spiegazioni elettronici	B/W TV Horizontal Deflection Output

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Produttore elettronici	FAIRCHILD [Fairchild Semiconductor]

Homepage	http://www.fairchildsemi.com

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Rev. A, February 2000

NPN Epitaxial Silicon Transistor

Absolute Maximum Ratings T

C=25°C unless otherwise noted

Electrical Characteristics T

C=25°C unless otherwise noted

hFE Classification

Symbol

Parameter

Value

Units

VCBO

Collector-Base Voltage

300

V

VCEO

Collector-Emitter Voltage

120

V

VEBO

Emitter-Base Voltage

8

V

IC

Collector Current

6

A

PC

Collector Dissipation (TC=25°C)

40

W

TJ

Junction Temperature

150

°C

TSTG

Storage Temperature

- 55 ~ 150

°C

Symbol

Parameter

Test Condition

Min.

Typ.

Max.

Units

BVCBO

Collector-Base Breakdown Voltage

IC =1mA, IE = 0

300

V

BVCEO

Collector-Emitter Breakdown Voltage

IC = 20mA, IB = 0

120

V

BVEBO

Emitter-Base Breakdown Voltage

IE = 1mA, IC = 0

8

V

ICBO

Collector Cut-off Current

VCB = 250V, IE = 0

1

mA

hFE

DC Current Gain

VCE = 5V, IC = 1A

40

240

VCE(sat)

Collector-Emitter Saturation Voltage

IC = 1A, IB = 0.1A

1

V

VBE(sat)

Base-Emitter Saturation Voltage

IC = 1A, IB = 0.1A

1.5

V

fT

Current Gain Bandwidth Product

VCE = 5V, IC = 0.5A

10

MHz

Classification

R

O

Y

hFE

40 ~ 80

70 ~ 140

120 ~ 240

KSD363

B/W TV Horizontal Deflection Output

• Collector-Base Voltage : VCBO=300V

• Collector Current : IC=6A

• Collector Dissipation : PC=40W(TC=25°C)

1.Base

2.Collector

3.Emitter

1

TO-220

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