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KSD363R Scheda tecnica(PDF) 1 Page - Fairchild Semiconductor |
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KSD363R Scheda tecnica(HTML) 1 Page - Fairchild Semiconductor |
1 / 4 page ©2000 Fairchild Semiconductor International Rev. A, February 2000 NPN Epitaxial Silicon Transistor Absolute Maximum Ratings T C=25°C unless otherwise noted Electrical Characteristics T C=25°C unless otherwise noted hFE Classification Symbol Parameter Value Units VCBO Collector-Base Voltage 300 V VCEO Collector-Emitter Voltage 120 V VEBO Emitter-Base Voltage 8 V IC Collector Current 6 A PC Collector Dissipation (TC=25°C) 40 W TJ Junction Temperature 150 °C TSTG Storage Temperature - 55 ~ 150 °C Symbol Parameter Test Condition Min. Typ. Max. Units BVCBO Collector-Base Breakdown Voltage IC =1mA, IE = 0 300 V BVCEO Collector-Emitter Breakdown Voltage IC = 20mA, IB = 0 120 V BVEBO Emitter-Base Breakdown Voltage IE = 1mA, IC = 0 8 V ICBO Collector Cut-off Current VCB = 250V, IE = 0 1 mA hFE DC Current Gain VCE = 5V, IC = 1A 40 240 VCE(sat) Collector-Emitter Saturation Voltage IC = 1A, IB = 0.1A 1 V VBE(sat) Base-Emitter Saturation Voltage IC = 1A, IB = 0.1A 1.5 V fT Current Gain Bandwidth Product VCE = 5V, IC = 0.5A 10 MHz Classification R O Y hFE 40 ~ 80 70 ~ 140 120 ~ 240 KSD363 B/W TV Horizontal Deflection Output • Collector-Base Voltage : VCBO=300V • Collector Current : IC=6A • Collector Dissipation : PC=40W(TC=25°C) 1.Base 2.Collector 3.Emitter 1 TO-220 |
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