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MTV6N100E Scheda tecnica(PDF) 6 Page - Motorola, Inc |
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MTV6N100E Scheda tecnica(HTML) 6 Page - Motorola, Inc |
6 / 10 page MTV6N100E 6 Motorola TMOS Power MOSFET Transistor Device Data SAFE OPERATING AREA Figure 12. Maximum Rated Forward Biased Safe Operating Area Figure 13. Maximum Avalanche Energy versus Starting Junction Temperature Figure 14. Thermal Response Figure 15. Diode Reverse Recovery Waveform di/dt trr ta tp IS 0.25 IS TIME IS tb 0.1 1.0 1000 100 RDS(on) LIMIT THERMAL LIMIT PACKAGE LIMIT 0.01 100 10 0.1 10 100 µs 1 ms 10 ms dc 10 µs TJ, STARTING JUNCTION TEMPERATURE (°C) VDS, DRAIN–TO–SOURCE VOLTAGE (VOLTS) 1.0 25 150 0 700 VGS = 20 V SINGLE PULSE TC = 25°C 50 100 125 75 600 500 400 300 100 200 ID = 6 A t, TIME (s) 1.0E–05 1.0E–04 1.0E–02 0.1 1.0 0.01 1.0E–03 1.0E–01 1.0E+00 0.2 0.1 0.05 0.02 0.01 SINGLE PULSE D = 0.5 1.0E+01 R θJC(t) = r(t) RθJC D CURVES APPLY FOR POWER PULSE TRAIN SHOWN READ TIME AT t1 TJ(pk) – TC = P(pk) R θJC(t) P(pk) t1 t2 DUTY CYCLE, D = t1/t2 800 |
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