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MTV16N50E Scheda tecnica(PDF) 6 Page - Motorola, Inc |
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MTV16N50E Scheda tecnica(HTML) 6 Page - Motorola, Inc |
6 / 10 page MTV16N50E 6 Motorola TMOS Power MOSFET Transistor Device Data SAFE OPERATING AREA TJ, STARTING JUNCTION TEMPERATURE (°C) Figure 11. Maximum Rated Forward Biased Safe Operating Area VDS, DRAIN–TO–SOURCE VOLTAGE (VOLTS) Figure 12. Maximum Avalanche Energy versus Starting Junction Temperature 25 50 75 100 125 150 t, TIME (s) Figure 13. Thermal Response Figure 14. Diode Reverse Recovery Waveform di/dt trr ta tp IS 0.25 IS TIME IS tb 0 600 400 300 200 500 100 RDS(on) LIMIT THERMAL LIMIT PACKAGE LIMIT 10 VGS = 20 V SINGLE PULSE TC = 25°C 1 1 10 100 0.1 dc 100 µs 1 ms 10 ms 1000 100 ID = 16 A 1 0.1 0.001 0.01 1.0E–05 1.0E–04 1.0E–03 1.0E–02 1.0E–01 1.0E+00 1.0E+01 R θJC(t) = r(t) RθJC D CURVES APPLY FOR POWER PULSE TRAIN SHOWN READ TIME AT t1 TJ(pk) – TC = P(pk) R θJC(t) P(pk) t1 t2 DUTY CYCLE, D = t1/t2 0.02 D = 0.5 0.05 0.01 SINGLE PULSE 0.1 0.2 700 800 900 |
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