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FDD86113LZ Scheda tecnica(PDF) 2 Page - Fairchild Semiconductor

Il numero della parte FDD86113LZ
Spiegazioni elettronici  N-Channel Shielded Gate PowerTrench짰 MOSFET 100 V, 5.5 A, 104 m廓
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Produttore elettronici  FAIRCHILD [Fairchild Semiconductor]
Homepage  http://www.fairchildsemi.com
Logo FAIRCHILD - Fairchild Semiconductor

FDD86113LZ Scheda tecnica(HTML) 2 Page - Fairchild Semiconductor

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©2011 Fairchild Semiconductor Corporation
2
www.fairchildsemi.com
FDD86113LZ Rev. C1
Electrical Characteristics T
J = 25 °C unless otherwise noted
Off Characteristics
On Characteristics
Dynamic Characteristics
Switching Characteristics
Drain-Source Diode Characteristics
Symbol
Parameter
Test Conditions
Min
Typ
Max
Units
BVDSS
Drain to Source Breakdown Voltage
ID = 250 μA, VGS = 0 V
100
V
ΔBV
DSS
ΔT
J
Breakdown Voltage Temperature
Coefficient
ID = 250 μA, referenced to 25 °C
72
mV/°C
IDSS
Zero Gate Voltage Drain Current
VDS = 80 V, VGS = 0 V
1
μA
IGSS
Gate to Source Leakage Current
VGS = ±20 V, VDS = 0 V
±10
μA
VGS(th)
Gate to Source Threshold Voltage
VGS = VDS, ID = 250 μA1
1.5
3
V
ΔV
GS(th)
ΔT
J
Gate to Source Threshold Voltage
Temperature Coefficient
ID = 250 μA, referenced to 25 °C
-5
mV/°C
rDS(on)
Static Drain to Source On Resistance
VGS = 10 V, ID = 4.2 A
87
104
m
Ω
VGS = 4.5 V, ID = 3.4 A
116
156
VGS = 10 V, ID = 4.2 A,TJ = 125 °C
142
170
gFS
Forward Transconductance
VDS = 5 V, ID = 4.2 A
9
S
Ciss
Input Capacitance
VDS = 50 V, VGS = 0 V,
f = 1MHz
213
285
pF
Coss
Output Capacitance
55
75
pF
Crss
Reverse Transfer Capacitance
2.4
5
pF
Rg
Gate Resistance
1.4
Ω
td(on)
Turn-On Delay Time
VDD = 50 V, ID = 4.2 A,
VGS = 10 V, RGEN = 6 Ω
3.6
10
ns
tr
Rise Time
1.3
10
ns
td(off)
Turn-Off Delay Time
9.7
20
ns
tf
Fall Time
1.6
10
ns
Qg(TOT)
Total Gate Charge
VGS = 0 V to 10 V
VDD = 50 V,
ID = 4.2 A
3.7
6
nC
Qg(TOT)
Total Gate Charge
VGS = 0 V to 4.5 V
1.9
3
Qgs
Gate to Source Charge
0.6
nC
Qgd
Gate to Drain “Miller” Charge
0.7
nC
VSD
Source to Drain Diode Forward Voltage
VGS = 0 V, IS = 4.2 A
(Note 2)
0.88
1.3
V
VGS = 0 V, IS = 1.7 A
(Note 2)
0.80
1.2
trr
Reverse Recovery Time
IF = 4.2 A, di/dt = 100 A/μs
31
49
ns
Qrr
Reverse Recovery Charge
20
33
nC
NOTES:
1. RθJA is determined with the device mounted on a 1 in
2 pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR-4 material. RθJC is guaranteed by design while RθCA is determined by
the user's board design.
2. Pulse Test: Pulse Width < 300
μs, Duty cycle < 2.0 %.
3. Starting TJ = 25 °C, L = 1 mH, IAS = 5 A, VDD = 90 V, VGS = 10 V.
4. The diode connected between gate and source serves only as protection against ESD. No gate overvoltage rating is implied.
40 °C/W when mounted on a
1 in2 pad of 2 oz copper
a)
96 °C/W when mounted on a
minimum pad of 2 oz copper
b)


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