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SZNUD3124LT1G Scheda tecnica(PDF) 2 Page - ON Semiconductor |
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SZNUD3124LT1G Scheda tecnica(HTML) 2 Page - ON Semiconductor |
2 / 10 page NUD3124, SZNUD3124 http://onsemi.com 2 MAXIMUM RATINGS (TJ = 25°C unless otherwise specified) Symbol Rating Value Unit VDSS Drain−to−Source Voltage – Continuous (TJ = 125°C) 28 V VGSS Gate−to−Source Voltage – Continuous (TJ = 125°C) 12 V ID Drain Current – Continuous (TJ = 125°C) 150 mA EZ Single Pulse Drain−to−Source Avalanche Energy (For Relay’s Coils/Inductive Loads of 80 W or Higher) (TJ Initial = 85°C) 250 mJ PPK Peak Power Dissipation, Drain−to−Source (Notes 1 and 2) (TJ Initial = 85°C) 20 W ELD1 Load Dump Suppressed Pulse, Drain−to−Source (Notes 3 and 4) (Suppressed Waveform: Vs = 45 V, RSOURCE = 0.5 W, T = 200 ms) (For Relay’s Coils/Inductive Loads of 80 W or Higher) (TJ Initial = 85°C) 80 V ELD2 Inductive Switching Transient 1, Drain−to−Source (Waveform: RSOURCE = 10 W, T = 2.0 ms) (For Relay’s Coils/Inductive Loads of 80 W or Higher) (TJ Initial = 85°C) 100 V ELD3 Inductive Switching Transient 2, Drain−to−Source (Waveform: RSOURCE = 4.0 W, T = 50 ms) (For Relay’s Coils/Inductive Loads of 80 W or Higher) (TJ Initial = 85°C) 300 V Rev−Bat Reverse Battery, 10 Minutes (Drain−to−Source) (For Relay’s Coils/Inductive Loads of 80 W or more) −14 V Dual−Volt Dual Voltage Jump Start, 10 Minutes (Drain−to−Source) 28 V ESD Human Body Model (HBM) According to EIA/JESD22/A114 Specification 2,000 V Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. Nonrepetitive current square pulse 1.0 ms duration. 2. For different square pulse durations, see Figure 2. 3. Nonrepetitive load dump suppressed pulse per Figure 3. 4. For relay’s coils/inductive loads higher than 80 W, see Figure 4. |
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