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2SA970 Scheda tecnica(PDF) 1 Page - Toshiba Semiconductor |
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2SA970 Scheda tecnica(HTML) 1 Page - Toshiba Semiconductor |
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1 / 4 page  2SA970 2007-11-01 1 TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) 2SA970 Low Noise Audio Amplifier Applications • Low noise :NF = 3dB (typ.) RG = 100 Ω, VCE = −6 V, IC = −100 μA, f = 1 kHz : NF = 0.5dB (typ.) RG = 1 kΩ, VCE = −6 V, IC = −100 μA, f = 1 kHz • High DC current gain: hFE = 200~700 • High breakdown voltage: VCEO = −120 V • Low pulse noise. Low 1/f noise Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Collector-base voltage VCBO −120 V Collector-emitter voltage VCEO −120 V Emitter-base voltage VEBO −5 V Collector current IC −100 mA Base current IB −20 mA Collector power dissipation PC 300 mW Junction temperature Tj 125 °C Storage temperature range Tstg −55~125 °C Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Electrical Characteristics (Ta = 25°C) Characteristics Symbol Test Condition Min Typ. Max Unit Collector cut-off current ICBO VCB = −120 V, IE = 0 ⎯ ⎯ −0.1 μA Emitter cut-off current IEBO VEB = −5 V, IC = 0 ⎯ ⎯ −0.1 μA Collector-emitter breakdown voltage V (BR) CEO IC = −1 mA, IB = 0 −120 ⎯ ⎯ V DC current gain hFE (Note) VCE = −6 V, IC = −2 mA 200 ⎯ 700 Collector-emitter saturation voltage VCE (sat) IC = −10 mA, IB = −1 mA ⎯ ⎯ −0.3 V Base-emitter voltage VBE VCE = −6 V, IC = −2 mA ⎯ −0.65 ⎯ V Transition frequency fT VCE = −6 V, IC = −1 mA ⎯ 100 ⎯ MHz Collector output capacitance Cob VCB = −10 V, IE = 0, f = 1 MHz ⎯ 4.0 ⎯ pF VCE = −6 V, IC = −0.1 mA, f = 10 Hz, RG = 10 kΩ ⎯ ⎯ 6 VCE = −6 V, IC = −0.1 mA, f = 1 kHz, RG = 10 kΩ ⎯ ⎯ 2 Noise figure NF VCE = −6 V, IC = −0.1 mA, f = 1 kHz, RG = 100 Ω ⎯ 3 ⎯ dB Note: hFE classification GR: 200~400, BL: 350~700 Unit: mm JEDEC TO-92 JEITA SC-43 TOSHIBA 2-5F1B Weight: 0.21 g (typ.) |
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