IRF1010NPBF datasheet(4/8 Pages) KERSEMI

Il numero della parte	IRF1010NPBF

Spiegazioni elettronici	Advanced Process Technology Ultra Low On-Resistance

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Produttore elettronici	KERSEMI [Kersemi Electronic Co., Ltd.]

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IRF1010NPbF

4

Fig 8. Maximum Safe Operating Area

Fig 6. Typical Gate Charge Vs.

Gate-to-Source Voltage

Fig 5. Typical Capacitance Vs.

Drain-to-Source Voltage

Fig 7. Typical Source-Drain Diode

Forward Voltage

0

20

40

60

80

100

120

0

4

8

12

16

20

Q , Total Gate Charge (nC)

G

FOR TEST CIRCUIT

SEE FIGURE

I =

D

13

43A

V

= 11V

DS

V

= 27V

DS

V

= 44V

DS

0.1

1

10

100

1000

0.0

0.6

1.2

1.8

2.4

V

,Source-to-Drain Voltage (V)

SD

V

= 0 V

GS

T = 25 C

J

°

T = 175 C

J

°

1

10

100

VDS, Drain-to-Source Voltage (V)

0

1000

2000

3000

4000

5000

6000

Coss

Crss

Ciss

VGS = 0V,

f = 1 MHZ

Ciss = Cgs + Cgd, Cds SHORTED

Crss = Cgd

Coss = Cds+ Cgd

1

10

100

1000

VDS , Drain-toSource Voltage (V)

1

10

100

1000

Tc = 25°C

Tj = 175°C

Single Pulse

1msec

10msec

OPERATION IN THIS AREA

LIMITED BY R DS(on)

100µsec

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