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FQPF7N60 Scheda tecnica(PDF) 1 Page - Kersemi Electronic Co., Ltd. |
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FQPF7N60 Scheda tecnica(HTML) 1 Page - Kersemi Electronic Co., Ltd. |
1 / 7 page April 2000 FQPF7N60 600V N-Channel MOSFET General Description Features • 4.3A, 600V, RDS(on) = 1.0Ω @VGS = 10 V • Low gate charge ( typical 29 nC) • Low Crss ( typical 16 pF) • Fast switching • 100% avalanche tested • Improved dv/dt capability Absolute Maximum Ratings T C = 25°C unless otherwise noted Thermal Characteristics Symbol Parameter FQPF7N60 Units VDSS Drain-Source Voltage 600 V ID Drain Current - Continuous (TC = 25°C) 4.3 A - Continuous (TC = 100°C) 2.7 A IDM Drain Current - Pulsed (Note 1) 17.2 A VGSS Gate-Source Voltage ±30 V EAS Single Pulsed Avalanche Energy (Note 2) 580 mJ IAR Avalanche Current (Note 1) 4.3 A EAR Repetitive Avalanche Energy (Note 1) 4.8 mJ dv/dt Peak Diode Recovery dv/dt (Note 3) 4.5 V/ns PD Power Dissipation (TC = 25°C) 48 W - Derate above 25°C 0.38 W/°C TJ, TSTG Operating and Storage Temperature Range -55 to +150 °C TL Maximum lead temperature for soldering purposes, 1/8 from case for 5 seconds 300 °C Symbol Parameter Typ Max Units RθJC Thermal Resistance, Junction-to-Case -- 2.60 °C W RθJA Thermal Resistance, Junction-to-Ambient -- 62.5 °C W ! " ! ! ! " " " ! " ! ! ! " " " S D G TO-220F FQPF Series G S D These N-Channel enhancement mode power field effect transistors are produced using Corise Semiconductorÿs proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switch mode power supply. |
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