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FQPF3N60 Scheda tecnica(PDF) 1 Page - Kersemi Electronic Co., Ltd.

Il numero della parte FQPF3N60
Spiegazioni elettronici  600V N-Channel MOSFET
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Produttore elettronici  KERSEMI [Kersemi Electronic Co., Ltd.]
Homepage  http://www.kersemi.com
Logo KERSEMI - Kersemi Electronic Co., Ltd.

FQPF3N60 Scheda tecnica(HTML) 1 Page - Kersemi Electronic Co., Ltd.

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FQPF3N60
600V N-Channel MOSFET
General Description
Features
• 2.0A, 600V, RDS(on) = 3.6Ω @VGS = 10 V
• Low gate charge ( typical 10 nC)
• Low Crss ( typical 5.5 pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
Absolute Maximum Ratings
 T
C = 25°C unless otherwise noted
Thermal Characteristics
Symbol
Parameter
FQPF3N60
Units
VDSS
Drain-Source Voltage
600
V
ID
Drain Current
- Continuous (TC = 25°C)
2.0
A
- Continuous (TC = 100°C)
1.26
A
IDM
Drain Current
- Pulsed
(Note 1)
8.0
A
VGSS
Gate-Source Voltage
±30
V
EAS
Single Pulsed Avalanche Energy
(Note 2)
200
mJ
IAR
Avalanche Current
(Note 1)
2.0
A
EAR
Repetitive Avalanche Energy
(Note 1)
3.4
mJ
dv/dt
Peak Diode Recovery dv/dt
(Note 3)
4.5
V/ns
PD
Power Dissipation (TC = 25°C)
34
W
- Derate above 25°C
0.27
W/°C
TJ, TSTG
Operating and Storage Temperature Range
-55 to +150
°C
TL
Maximum lead temperature for soldering purposes,
1/8
 from case for 5 seconds
300
°C
Symbol
Parameter
Typ
Max
Units
RθJC
Thermal Resistance, Junction-to-Case
--
3.68
°C
W
RθCS
Thermal Resistance, Case-to-Sink
0.5
--
°C
W
RθJA
Thermal Resistance, Junction-to-Ambient
--
62.5
°C
W
! "
!
!
!
"
"
"
! "
!
!
!
"
"
"
S
D
G
TO-220F
FQPF Series
G
S
D
These N-Channel enhancement mode power field effect
transistors are produced using Corise Semiconductorÿs proprietary,
planar stripe, DMOS technology.
This advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the
avalanche and commutation mode. These devices are well
suited for high efficiency switch mode power supply.


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