STPSC10H065B-TR datasheet(2/9 Pages) STMICROELECTRONICS

Il numero della parte	STPSC10H065B-TR

Spiegazioni elettronici	650 V power Schottky silicon carbide diode

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Characteristics

STPSC10H065

2/9

Doc ID 023604 Rev 2

1

Characteristics

To evaluate the conduction losses use the following equation:

P = 1.35 x IF(AV) + 0.115 x IF

2

(RMS)

Table 2.

Absolute ratings (limiting values at 25 °C unless otherwise specified)

Symbol

Parameter

Value

Unit

VRRM

Repetitive peak reverse voltage

650

V

IF(RMS) Forward rms current

22

A

IF(AV)

Average forward current

Tc = 120 °C,  = 0.5

10

A

IFSM

Surge non repetitive forward

current

tp = 10 ms sinusoidal, Tc = 25 °C

tp = 10 ms sinusoidal, Tc = 125 °C

tp = 10 µs square, Tc = 25 °C

90

80

470

A

IFRM

Repetitive peak forward current

Tc = 120 °C,Tj = 150 °C,  = 0.1

36

A

Tstg

Storage temperature range

-55 to +175

°C

Tj

Operating junction temperature(1)

1.

condition to avoid thermal runaway for a diode on its own heatsink

-40 to +175

°C

Table 3.

Thermal resistance (typical values)

Symbol

Parameter

Value

Unit

Typ.

Max.

Rth(j-c)

Junction to case

1.25

1.5

°C/W

Table 4.

Static electrical characteristics

Symbol

Parameter

Tests conditions

Min.

Typ.

Max.

Unit

IR

(1)

1.

tp = 10 ms,  < 2%

Reverse leakage current

Tj = 25 °C

VR = VRRM

-9

100

µA

Tj = 150 °C

-

85

425

VF

(2)

2.

tp = 500 µs,  < 2%

Forward voltage drop

Tj = 25 °C

IF = 10 A

-1.56

1.75

V

Tj = 150 °C

-

1.98

2.5

Table 5.

Dynamic electrical characteristics

Symbol

Parameter

Test conditions

Typ.

Unit

Qcj

(1)

1.

Most accurate value for the capacitive charge:

Total capacitive charge VR = 400 V,

28.5

nC

Cj

Total capacitance

VR = 0 V, Tc = 25 °C, F = 1 MHz

480

pF

VR = 400 V, Tc = 25 °C, F = 1 MHz

48

dPtot

dTj

---------------

1

Rth j

a

–



--------------------------



Q =

cj(vR).dvR

cj

∫

VOUT

0

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