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STPSC10H065B-TR Scheda tecnica(PDF) 2 Page - STMicroelectronics |
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STPSC10H065B-TR Scheda tecnica(HTML) 2 Page - STMicroelectronics |
2 / 9 page Characteristics STPSC10H065 2/9 Doc ID 023604 Rev 2 1 Characteristics To evaluate the conduction losses use the following equation: P = 1.35 x IF(AV) + 0.115 x IF 2 (RMS) Table 2. Absolute ratings (limiting values at 25 °C unless otherwise specified) Symbol Parameter Value Unit VRRM Repetitive peak reverse voltage 650 V IF(RMS) Forward rms current 22 A IF(AV) Average forward current Tc = 120 °C, = 0.5 10 A IFSM Surge non repetitive forward current tp = 10 ms sinusoidal, Tc = 25 °C tp = 10 ms sinusoidal, Tc = 125 °C tp = 10 µs square, Tc = 25 °C 90 80 470 A IFRM Repetitive peak forward current Tc = 120 °C,Tj = 150 °C, = 0.1 36 A Tstg Storage temperature range -55 to +175 °C Tj Operating junction temperature(1) 1. condition to avoid thermal runaway for a diode on its own heatsink -40 to +175 °C Table 3. Thermal resistance (typical values) Symbol Parameter Value Unit Typ. Max. Rth(j-c) Junction to case 1.25 1.5 °C/W Table 4. Static electrical characteristics Symbol Parameter Tests conditions Min. Typ. Max. Unit IR (1) 1. tp = 10 ms, < 2% Reverse leakage current Tj = 25 °C VR = VRRM -9 100 µA Tj = 150 °C - 85 425 VF (2) 2. tp = 500 µs, < 2% Forward voltage drop Tj = 25 °C IF = 10 A -1.56 1.75 V Tj = 150 °C - 1.98 2.5 Table 5. Dynamic electrical characteristics Symbol Parameter Test conditions Typ. Unit Qcj (1) 1. Most accurate value for the capacitive charge: Total capacitive charge VR = 400 V, 28.5 nC Cj Total capacitance VR = 0 V, Tc = 25 °C, F = 1 MHz 480 pF VR = 400 V, Tc = 25 °C, F = 1 MHz 48 dPtot dTj --------------- 1 Rth j a – -------------------------- Q = cj(vR).dvR cj ∫ VOUT 0 |
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