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PZTA64 Scheda tecnica(PDF) 2 Page - Fairchild Semiconductor |
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PZTA64 Scheda tecnica(HTML) 2 Page - Fairchild Semiconductor |
2 / 3 page Electrical Characteristics TA = 25°C unless otherwise noted OFF CHARACTERISTICS Symbol Parameter Test Conditions Min Max Units V(BR)CES Collector-Emitter Breakdown Voltage IC = 100 µA, I B = 0 30 V ICBO Collector-Cutoff Current VCB = 30 V, IE = 0 100 nA IEBO Emitter-Cutoff Current VEB = 10 V, IC = 0 100 nA ON CHARACTERISTICS* hFE DC Current Gain IC = 10 mA, VCE = 5.0 V IC = 100 mA, VCE = 5.0 V 10,000 20,000 VCE(sat) Collector-Emitter Saturation Voltage IC = 100 mA, IB = 0.1 mA 1.5 V VBE(on) Base-Emitter On Voltage IC = 100 mA, VCE = 5.0 V 2.0 V SMALL SIGNAL CHARACTERISTICS *Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2.0% fT Current Gain - Bandwidth Product IC = 10 mA, VCE = 5.0 V, f = 100 MHz 125 MHz Typical Characteristics Collector-Emitter Saturation Voltage vs Collector Current 0.001 0.01 0.1 1 0 0.4 0.8 1.2 1.6 I - COLLECTOR CURRENT (A) C β = 1000 25 °C - 40 ºC 125 ºC Typical Pulsed Current Gain vs Collector Current 0.01 0.1 1 0 10 20 30 40 50 I - COLLECTOR CURRENT (A) C 125 °C 25 °C - 40 °C V = 5V CE PNP Darlington Transistor (continued) |
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