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KSE2955T Scheda tecnica(PDF) 1 Page - Fairchild Semiconductor |
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KSE2955T Scheda tecnica(HTML) 1 Page - Fairchild Semiconductor |
1 / 4 page ©2000 Fairchild Semiconductor International Rev. A1, December 2000 PNP Silicon Transistor Absolute Maximum Ratings T C=25°C unless otherwise noted Electrical Characteristics T C=25°C unless otherwise noted * Pulse test: PW ≤300µs, duty cycle≤2% Pulse Symbol Parameter Value Units VCBO Collector-Base Voltage - 70 V VCEO Collector-Emitter Voltage - 60 V VEBO Emitter-Base Voltage - 5 V IC Collector Current - 10 A IB Base Current - 6 A PC Collector Dissipation (TC=25°C) 75 W Collector Dissipation (Ta=25°C) 0.6 W TJ Junction Temperature 150 °C TSTG Storage Temperature - 55 ~ 150 °C Symbol Parameter Test Condition Min. Max. Units BVCEO Collector- Emitter Breakdown Voltage IC= - 200mA, IB = 0 -60 V ICEO Collector Cut-off Current VCE = - 30V, IB = 0 -700 µA ICEX1 Collector Cut-off Current VCE = - 70V, VBE(off) = 1.5V -1 mA ICEX2 Collector Cut-off Current VCE = - 70V, VBE(off) = 1.5V @ TC = 150°C -5 mA IEBO Emitter Cut-off Current VEB = - 5V, IC = 0 -5 mA hFE * DC Current Gain VCE = - 4V, IC = - 4A VCE = - 4V, IC = - 10A 20 5 100 VCE(sat) * Collector-Emitter Saturation Voltage IC = - 4A, IB = - 0.4A IC = - 10A, IB = - 3.3A -1.1 -8 V V VBE (on) * Base-Emitter On Voltage VCE = - 4V, IC = - 4A -1.8 V fT Current Gain Bandwidth Product VCE = - 10V, IC = - 500mA 2 MHz KSE2955T General Purpose and Switching Applications • DC Current Gain Specified to IC = 10 A • High Current Gain Bandwidth Product : fT = 2MHz (Min.) 1.Base 2.Collector 3.Emitter 1 TO-220 |
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