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MJ1000 Scheda tecnica(PDF) 2 Page - Comset Semiconductor |
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MJ1000 Scheda tecnica(HTML) 2 Page - Comset Semiconductor |
2 / 3 page NPN MJ1000 – MJ1001 29/10/2012 COMSET SEMICONDUCTORS 2 | 3 ELECTRICAL CHARACTERISTICS TC=25°C unless otherwise noted Symbol Ratings Test Condition(s) Min Typ Max Unit VCEO Collector-Emitter Breakdown Voltage (*) IC=100 mA, IB=0 MJ1000 60 - - V MJ1001 80 - - ICEO Collector Cutoff Current VCE=30 V, IB=0 MJ1000 - - 500 µA VCE=40 V, IB=0 MJ1001 - - IEBO Emitter Cutoff Current VBE=5.0 V, IC=0 MJ1000 - - 2.0 mA MJ1001 ICER Collector-Emitter Leakage Current VCB=60 V, RBE=1.0 kΩ MJ1000 - - 1.0 mA VCB=80 V RBE=1.0 kΩ MJ1001 - - VCB=60 V RBE=1.0 kΩ TC=150°C MJ1000 - - 5.0 VCB=80 V RBE=1.0 kΩ TC=150°C MJ1001 - - VCE(SAT) Collector-Emitter saturation Voltage (*) IC=3.0 A, IB=2 mA MJ1000 - - 2.0 V MJ1001 IC=8.0 A, IB=40 mA MJ1000 - - 4.0 MJ1001 VF Forward Voltage (pulse method) IF=3 A MJ1000 - 1.8 - V MJ1001 VBE Base-Emitter Voltage (*) IC=3.0 A, VCE=3.0 V MJ1000 - - 2.5 V MJ1001 HFE DC Current Gain (*) VCE=3.0 V, IC=3.0 A MJ1000 1000 - - - MJ1001 VCE=3.0 V, IC=4.0 A MJ1000 750 - - MJ1001 (*) Pulse Width ≈ 300 µs, Duty Cycle ∠ 2.0% |
Codice articolo simile - MJ1000 |
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Descrizione simile - MJ1000 |
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