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BDY57 Scheda tecnica(PDF) 1 Page - Comset Semiconductor |
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BDY57 Scheda tecnica(HTML) 1 Page - Comset Semiconductor |
1 / 3 page NPN BDY57 – BDY58 09/11/2012 COMSET SEMICONDUCTORS 1 | 3 SILICON TRANSISTORS, DIFFUSED MESA The BDY57 and BDY58 are mounted in TO-3 metal package. LF Large Signal Power Amplification High Current Fast Switching. Compliance to RoHS. ABSOLUTE MAXIMUM RATINGS Symbol Ratings Value Unit VCEO Collector-Emitter Voltage BDY57 80 V BDY58 125 VCBO Collector-Base Voltage BDY57 120 V BDY58 160 VEBO Emitter-Base Voltage 10 V IC Collector Current 25 A IB Base Current 6 A PTOT Power Dissipation @ TC = 25° 175 W TJ TS Junction Temperature Storage Temperature -65 to +200 °C THERMAL CHARACTERISTICS Symbol Ratings Value Unit RthJ-C Thermal Resistance, Junction to Case 1 °C/W |
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