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BDY55 Scheda tecnica(PDF) 1 Page - Comset Semiconductor |
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BDY55 Scheda tecnica(HTML) 1 Page - Comset Semiconductor |
1 / 3 page BDY55 – BDY56 23/10/2012 COMSET SEMICONDUCTORS 1 | 3 N NP PN N S SIIL LIIC CO ON N T TR RA AN NS SIIS ST TO OR RS S,, D DIIF FF FU US SE ED D M ME ES SA A The BDY55 and BDY56 are mounted in TO-3 metal package. LF Large Signal Power Amplification High Current Fast Switching. Compliance to RoHS. ABSOLUTE MAXIMUM RATINGS Symbol Ratings Value Unit VCEO Collector-Emitter Voltage BDY55 60 V BDY56 120 VCBO Collector-Base Voltage BDY55 100 V BDY56 150 VEBO Emitter-Base Voltage 7 V IC Collector Current 15 A IB Base Current 7 A PTOT Power Dissipation @ TC = 25° 117 W TJ Junction Temperature 200 °C TS Storage Temperature -65 to +200 THERMAL CHARACTERISTICS Symbol Ratings Value Unit RthJ-C Thermal Resistance, Junction to Case 1.5 °C/W |
Codice articolo simile - BDY55_12 |
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Descrizione simile - BDY55_12 |
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