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BDY54 Scheda tecnica(PDF) 2 Page - Comset Semiconductor |
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BDY54 Scheda tecnica(HTML) 2 Page - Comset Semiconductor |
2 / 3 page NPN BDY53 – BDY54 08/11/2012 COMSET SEMICONDUCTORS 2 | 3 ELECTRICAL CHARACTERISTICS TC=25°C unless otherwise noted Symbol Ratings Test Condition(s) Min Typ Max Unit VCEO(SUS) Collector-Emitter Breakdown Voltage (*) IC=100 mA, IB=0 BDY53 60 - - V BDY54 120 - - IEBO Emitter-Base Cutoff Current VEB=7 V BDY53 - - 3.0 mA BDY54 ICEX Collector-Emitter Cutoff Current VCE=100 V VBE=-1.5 V TCASE=150°C BDY53 - - 15 mA VCE=150 V VBE=-1.5 V TCASE=150°C BDY54 - - VCE(SAT) Collector-Emitter saturation Voltage (*) IC=4.0 A, IB=0.4 A BDY53 - - 1.1 V BDY54 IC=7.0 A, IB=1.4 A BDY53 - - 2.2 BDY54 VBE(SAT) Base-Emitter Voltage (*) IC=4.0 A, IB=0.4 A BDY53 - - 2 V BDY54 IC=7.0 A, IB=1.4 A BDY53 - - 2.5 BDY54 h21E Static Forward Current transfer ratio (*) VCE=1.5 V, IC=2 A BDY53 20 - 60 V BDY54 fT Transition Frequency VCE=4.0 V, IC=0.5 A f=10 MHz BDY53 20 - - MHz BDY54 td + tr Turn-on time IC=5 A, IB=1 A BDY53 - 0.3 - µs BDY54 ts + tf Turn-off time IC=5 A IB1=1 A IB2=-0.5 A BDY53 - 1.8 - µs BDY54 (*) Pulse Width ≈ 300 µs, Duty Cycle ∠ 2.0% |
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