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KA7912 Scheda tecnica(PDF) 10 Page - Fairchild Semiconductor |
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KA7912 Scheda tecnica(HTML) 10 Page - Fairchild Semiconductor |
10 / 18 page KA79XX/KA79XXA 10 Electrical Characteristics (KA7924) (Continued) (VI = -33V, IO = 500mA, 0 °C ≤TJ ≤ +125°C, CI =2.2µF, CO =1µF, unless otherwise specified.) Note 1. Load and line regulation are specified at constant junction temperature. Changes in VO due to heating effects must be taken into account separately. Pulse testing with low duty is used. Parameter Symbol Conditions Min. Typ. Max. Unit Output Voltage VO TJ = +25 °C -23 -24 -25 V IO = 5mA to 1A, PO ≤ 15W VI = -27V to -38V -22.8 -24 -25.2 Line Regulation (Note1) ∆VO TJ =+25 °C VI = -27V to -38V - 15 480 mV VI = -30V to -36V - 8 180 Load Regulation (Note1) ∆VO TJ = +25 °C, IO = 5mA to 1.5A - 15 480 mV TJ = +25 °C, IO = 250mA to 750mA - 5 240 Quiescent Current IQ TJ = +25 °C- 3 6 mA Quiescent Current Change ∆IQ IO = 5mA to 1A - 0.05 0.5 mA VI = -27V to -38V - 0.1 1 Temperature Coefficient of VD ∆Vo/∆TIO = 5mA - -1 - mV/ °C Output Noise Voltage VN f = 10Hz to 100kHz, TA =+25 °C - 400 - µV Ripple Rejection RR f = 120Hz, ∆VI = 10V 54 60 - dB Dropout Voltage VD TJ =+25 °C, IO = 1A - 2 - V Short Circuit Current ISC TJ =+25 °C, VI = -35V - 300 - mA Peak Current IPK TJ =+25 °C- 2.2 - A |
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