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W01M Scheda tecnica(PDF) 1 Page - Yea Shin Technology Co., Ltd |
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W01M Scheda tecnica(HTML) 1 Page - Yea Shin Technology Co., Ltd |
1 / 2 page DATA SHEET SEMICONDUCTOR http://www.yeashin.com 1 REV.02 20130305 W005M THRU W10M SINGLE-PHAS E SILICON BRIDGE Reverse Voltage - 50 to 1000 Volts Forward Current - 1.5 Amperes + WOM All Dimensions in millimeter WOG DIM. MIN. MAX. A C D E F B 8.90 9.30 25.4 27.9 5.60 5.10 0.70 0.80 4.60 5.60 A C D E F B F FEATURES Rating to 1000V PRV Ideal for printed circuit board Low forward voltage drop, high current capability. Reliable low cost construction utilizing molded epoxy technique results in inexpensive product The plastic material has UL flammability classification 94V-0 MECHANICAL DATA Case : Molded plastic Polarity: As marked on Body Weight : 0.05 ounces, 1.42grams Mounting position : Any MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Ratings at 25℃ ambient temperature unless otherwise specified. Single phase, half wave, 60Hz, resistive or inductive load. For capacitive load, derate current by 20% W005M NOTES : 1.Measured at 1.0MHz and applied reverse voltage of 4.0V DC. 2.Thermal Resistance Junction to Ambient @TA=25 C Maximum Average Forward Rectified Current Peak Forward Surge Current 8.3ms single half sine-wave superimposed on rated load (JEDEC METHOD) Maximum Recurrent Peak Reverse Voltage Maximum RMS Voltage Maximum DC Blocking Voltage Maximum forward Voltage at 1.0A DC Maximum DC Reverse Current at Rated DC Blocking Voltage Typical Junction Capacitance per element (Note 1) 1.5 50 1.0 5.0 500 20 Operating Temperature Range -55 to +150 C Storage Temperature Range -55 to +150 Typical Thermal Resistance (Note 2) 36 C/W pF uA V A A UNIT CHARACTERISTICS SYMBOL @TJ =25 C @TJ =125 C I 2t Rating for fusing (t < 8.3ms) A 2S I 2t 10.4 VRRM VRMS VDC I(AV) IFSM VF IR CJ RθJA TJ TSTG 50 35 50 100 70 100 W02M 200 140 200 400 280 400 W06M 600 420 600 W08M 800 560 800 W10M 1000 700 1000 W01M W04M V V V C |
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