ISL9V3040P3 datasheet(2/8 Pages) FAIRCHILD

Il numero della parte	ISL9V3040P3

Spiegazioni elettronici	EcoSPARKTM 300mJ, 400V, N-Channel Ignition IGBT

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Produttore elettronici	FAIRCHILD [Fairchild Semiconductor]

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ISL9V3040D3S / ISL9V3040S3S / ISL9V3040P3 / ISL9V3040S3 Rev. D2, April 2003

Package Marking and Ordering Information

Electrical Characteristics T

A = 25°C unless otherwise noted

Off State Characteristics

On State Characteristics

Dynamic Characteristics

Switching Characteristics

Thermal Characteristics

Device Marking

Device

Package

Tape Width

Quantity

V3040D

ISL9V3040D3S

TO-252AA

16mm

2500

V3040S

ISL9V3040S3S

TO-263AB

24mm

800

V3040P

ISL9V3040P3

TO-220AA

-

V3040S

ISL9V3040S3

TO-262AA

-

Symbol

Parameter

Test Conditions

Min

Typ

Max

Units

BVCER

Collector to Emitter Breakdown Voltage

IC = 2mA, VGE = 0,

RG = 1KΩ, See Fig. 15

TJ = -40 to 150°C

370

400

430

V

BVCES

Collector to Emitter Breakdown Voltage

IC = 10mA, VGE = 0,

RG = 0, See Fig. 15

TJ = -40 to 150°C

390

420

450

V

BVECS

Emitter to Collector Breakdown Voltage

IC = -75mA, VGE = 0V,

TC = 25°C

30

-

V

BVGES

Gate to Emitter Breakdown Voltage

IGES = ± 2mA

±12

±14

-

V

ICER

Collector to Emitter Leakage Current

VCER = 250V,

RG = 1KΩ, See

Fig. 11

TC = 25°C

-

25

µA

TC = 150°C

-

1

mA

IECS

Emitter to Collector Leakage Current

VEC = 24V, See

Fig. 11

TC = 25°C

-

1

mA

TC = 150°C

-

40

mA

R1

Series Gate Resistance

-

70

-

Ω

R2

Gate to Emitter Resistance

10K

-

26K

Ω

VCE(SAT)

Collector to Emitter Saturation Voltage

IC = 6A,

VGE = 4V

TC = 25°C,

See Fig. 3

-

1.25

1.60

V

VCE(SAT)

Collector to Emitter Saturation Voltage

IC = 10A,

VGE = 4.5V

TC = 150°C,

See Fig. 4

-

1.58

1.80

V

VCE(SAT)

Collector to Emitter Saturation Voltage

IC = 15A,

VGE = 4.5V

TC = 150°C

-

1.90

2.20

V

QG(ON)

Gate Charge

IC = 10A, VCE = 12V,

VGE = 5V, See Fig. 14

-17

-

nC

VGE(TH)

Gate to Emitter Threshold Voltage

IC = 1.0mA,

VCE = VGE,

See Fig. 10

TC = 25°C

1.3

-

2.2

V

TC = 150°C

0.75

-

1.8

V

VGEP

Gate to Emitter Plateau Voltage

IC = 10A,

VCE = 12V

-3.0

-

V

td(ON)R

Current Turn-On Delay Time-Resistive

VCE = 14V, RL = 1Ω,

VGE = 5V, RG = 1KΩ

TJ = 25°C, See Fig. 12

-0.7

4µs

trR

Current Rise Time-Resistive

-

2.1

7

µs

td(OFF)L

Current Turn-Off Delay Time-Inductive

VCE = 300V, L = 500µHy,

VGE = 5V, RG = 1KΩ

TJ = 25°C, See Fig. 12

-

4.8

15

µs

tfL

Current Fall Time-Inductive

-

2.8

15

µs

SCIS

Self Clamped Inductive Switching

TJ = 25°C, L = 3.0 mHy,

RG = 1KΩ, VGE = 5V, See

Fig. 1 & 2

-

300

mJ

RθJC

Thermal Resistance Junction-Case

TO-252,TO-263,TO-220,TO-

262

--

1.0

°C/W

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